1 Features

• High Bandwidth: 650 MHz (G = 1 V/V)
• High Slew Rate: 2550 V/μs (4-V Step)
• Excellent THD: –78 dBc at 10 MHz
• Low Input Voltage Noise: 8.9 nV/√Hz
• Fast Overdrive Recovery: 8 ns
• Fast Settling time (1% 4-V Step): 8 ns
• Low Input Offset Voltage: ±1 mV
• Low Input Bias Current: ±10 pA
• High Output Current: 70 mA

2 Applications

• High-Impedance Data Acquisition Input Amplifiers
• High-Impedance Oscilloscope Input Amplifiers
• Wideband Photodiode Transimpedance Amplifiers
• Wafer Scanning Equipment
• Optical Time-Domain Reflectometry (OTDR)
• High-Speed Time-of-Flight (TOF) Sensing

3 Description

The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection.

The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/μs slew rate.

The high input impedance and low bias current provided by the JFET input are supported by the low 8.9-nV/√Hz input voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications.

Broad transimpedance bandwidths are possible with the high 350-MHz gain bandwidth product of this device.

Where lower speed with lower quiescent current is required, consider the OPA656. Where unity-gain stability is not required, consider the OPA657.

1. For all available packages, see the orderable addendum at the end of the data sheet.

Typical Application

Transimpedance Gain vs Frequency