SCES590E
JULY 2004 – March 2018
SN74AUP1G06
PRODUCTION DATA.
1
Features
2
Applications
3
Description
Device Images
Logic Diagram
4
Revision History
5
Pin Functions and Configurations
Pin Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics, CL = 5 pF
6.7
Switching Characteristics, CL = 10 pF
6.8
Switching Characteristics, CL = 15 pF
6.9
Switching Characteristics
6.10
Operating Characteristics
6.11
Typical Characteristics
7
Parameter Measurement Information
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
CMOS Open-Drain Outputs
8.3.2
Standard CMOS Inputs
8.3.3
Clamp Diodes
8.3.4
Partial Power Down (Ioff)
8.3.5
Over-voltage Tolerant Inputs
8.4
Device Functional Modes
9
Application and Implementation
9.1
Application Information
9.2
Typical Application
9.2.1
Design Requirements
9.2.2
Detailed Design Procedure
9.2.3
Application Curve
10
Power Supply Recommendations
11
Layout
11.1
Layout Guidelines
11.2
Layout Example
12
Device and Documentation Support
12.1
Documentation Support
12.1.1
Related Documentation
12.2
Receiving Notification of Documentation Updates
12.3
Community Resources
12.4
Trademarks
12.5
Electrostatic Discharge Caution
12.6
Glossary
13
Mechanical, Packaging, and Orderable Information
封装选项
请参考 PDF 数据表获取器件具体的封装图。
机械数据 (封装 | 引脚)
DPW|5
DBV|5
DSF|6
DCK|5
DRL|5
YFP|4
DRY|6
散热焊盘机械数据 (封装 | 引脚)
DRY|6
QFND138E
订购信息
sces590e_oa
sces590e_pm
1
Features
Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Performance Tested Per JESD 22
2000-V Human-Body Model
(A114-B, Class II)
1000-V Charged-Device Model (C101)
Available in the Texas Instruments NanoStar™ Package
Low Static-Power Consumption
(I
CC
= 0.9 µA Maximum)
Low Dynamic-Power Consumption
(C
pd
= 1 pF Typical at 3.3 V)
Low Input Capacitance (C
i
= 1.5 pF Typical)
Low Noise – Overshoot and Undershoot <10% of V
CC
I
off
Supports Partial Power-Down-Mode Operation
Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at the Input (V
hys
= 250 mV Typical at 3.3 V)
Wide Operating V
CC
Range of 0.8 V to 3.6 V
Optimized for 3.3-V Operation
3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
t
pd
= 3.6 ns Maximum at 3.3 V
Suitable for Point-to-Point Applications
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