SCES596G JULY   2004  – August 2017 SN74AUP1G126

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Switching Characteristics: CL = 5 pF
    7. 6.7  Switching Characteristics: CL = 10 pF
    8. 6.8  Switching Characteristics: CL = 15 pF
    9. 6.9  Switching Characteristics: CL = 30 pF
    10. 6.10 Operating Characteristics
    11. 6.11 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 (Propagation Delays, Setup and Hold Times, and Pulse Width)
    2. 7.2 (Enable and Disable Times)
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Balanced CMOS Push-Pull Outputs
      2. 8.3.2 Standard CMOS Inputs
      3. 8.3.3 Clamp Diodes
      4. 8.3.4 Partial Power Down (Ioff)
      5. 8.3.5 Overvoltage Tolerant Inputs
      6. 8.3.6 Output Enable
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

1 Features

  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22−
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Available in the Texas Instruments NanoStar™ Package
  • Low Static-Power Consumption
    (ICC = 0.9 µA Maximum)
  • Low Dynamic-Power Consumption
    (Cpd = 4 pF Typical at 3.3 V)
  • Low Input Capacitance (Ci = 1.5 pF Typical)
  • Low Noise – Overshoot and Undershoot
    <10% of VCC
  • Input-Disable Feature Allows Floating Input Conditions
  • Ioff Supports Partial-Power-Down Mode Operation
  • Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at Input
  • Wide Operating VCC Range of 0.8 V to 3.6 V
  • Optimized for 3.3-V Operation
  • 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
  • tpd = 4.6 ns Maximum at 3.3 V
  • Suitable for Point-to-Point Applications

2 Applications

  • Audio Dock: Portable
  • BluRay™ Players and Home Theaters
  • Personal Digital Assistant (PDA)
  • Power: Telecom/Server AC/DC Supply: Single Controller: Analog and Digital
  • Solid-State Drive (SSD): Client and Enterprise
  • TV: LCD/Digital and High-Definition (HDTV)
  • Tablet: Enterprise
  • Wireless Headsets, Keyboards, and Mice

3 Description

The AUP family is TI's premier solution to the industry's low-power needs in battery-powered portable applications. This family assures a very low static and dynamic power consumption across the entire VCC range of 0.8 V to 3.6 V, resulting in an increased battery life. This product also maintains excellent signal integrity (see AUP – The Lowest-Power Family and Excellent Signal Integrity ).

This bus buffer gate is a single line driver with a 3-state output. The output is disabled when the output-enable (OE) input is low. This device has the input-disable feature, which allows floating input signals.

To assure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

NanoStar™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
SN74AUP1G126DRL SOT-5X3 (5) 1.60 mm × 1.20 mm
SN74AUP1G126DBV SOT-23 (5) 1.60 mm × 2.90 mm
SN74AUP1G126DCK SC70 (5) 1.25 mm × 2.00 mm
SN74AUP1G126DRY SON (6) 1.00 mm × 1.45 mm
SN74AUP1G126DSF SON (6) 1.00 mm × 1.00 mm
SN74AUP1G126YFP DSBGA (6) 0.76 mm × 1.16 mm
SN74AUP1G126YZP DSBGA (5) 0.89 mm × 1.39 mm
SN74AUP1G126DPW X2SON (5) 0.80 mm × 0.80 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Logic Diagram (Positive Logic)

SN74AUP1G126 ld_ces596.gif

4 Revision History

Changes from F Revision (May 2010) to G Revision

  • Added Device Information table, Pin Configuration and Functions section, ESD Ratings table, Thermal Information table, Feature Description section, Application and Implementation section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information sectionGo
  • Deleted Ordering Information table, see Mechanical, Packaging, and Orderable Information at the end of the data sheet Go
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