TPA313xD2 具有 AM 干扰抑制功能的 4W、25W 无滤波器 D 类立体声放大器

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1 特性

支持多种输出配置
- 7.4V 电压、8Ω 桥接负载 (BTL) 负载条件下的功率为 2 × 4W (TPA3130D2)
- 19V 电压、8Ω BTL 负载条件下的功率为 2 × 25W (TPA3132D2)
宽电压范围：4.5V 至 26V
汽车抛负载兼容
高效 D 类运行
- 兼具 > 90% 的功率效率与低空闲损耗特性，无需散热器即可稳定运行
- 高级调制系统配置
多重开关频率
- AM 抑制
- 主从模式同步
- 高达 1.2MHz 的切换频率
采用具有高 PSRR 的反馈功率级架构，降低了 PSU 需求
可编程功率限制
差分和单端输入
立体声模式和单声道模式（采用单滤波器单声道配置）
由单电源供电运行，减少了元件数量
集成了具有错误报告功能的自保护电路，其中包括过压、欠压、过热、直流检测和短路等保护
散热增强型封装
- 32 引脚超薄型四方扁平无引线 (VQFN) 封装（焊盘朝下）
-40°C 至 85°C 环境温度范围

2 应用

笔记本计算机和超极本
平板电视
消费类音频应用

3 说明

TPA313xD2 是用于驱动扬声器的高效立体声数字放大器功率级，峰值驱动功率高达 2x42W/4Ω。 TPA3131/32D2 的印刷电路板 (PCB) 通过底部 PowerPAD™ 进行散热，无需使用散热器，同时可持续提供 2 × 4W/8Ω (TPA3131D2) 至 2 × 25W/8Ω (TPA3132D2) 范围内的输出功率。

TPA313xD2 高级振荡器/PLL 电路采用多开关频率选项来抑制 AM 干扰；搭配使用主从模式同步选项时，还可使多个器件实现同步。

TPA313xD2 针对短路、过热、过压、欠压和直流等故障提供了全面保护。在过载情况下，器件会将故障情况报告给处理器，从而避免自身遭到损坏。

特性兼容器件包括：2 × 50W TPA3116D2（PowerPAD 朝上）、2 × 15W TPA3130D2（PowerPAD 朝下）和 2 × 30W TPA3118D2（PowerPAD 朝下）。

器件信息⁽¹⁾

器件型号	封装	封装尺寸（标称值）
TPA3131D2	VQFN (32)	5.00mm x 5.00mm
TPA3132D2	VQFN (32)	5.00mm x 5.00mm

如需了解所有可用封装，请见数据表末尾的可订购米6体育平台手机版_好二三四附录。

简化应用电路

4 修订历史记录

Changes from A Revision (September 2013) to B Revision

Added 引脚配置和功能部分、ESD 额定值表、特性描述部分、器件功能模式、应用和实施部分、电源相关建议部分、布局部分、器件和文档支持部分以及机械、封装和可订购信息部分Go
Changed Gain (BTL) to Gain (MSTR)Go
Changed Gain (MSTR) R1 values to R2 values and R2 values to R1 valuesGo
Changed Gain (SLV) R1 values to R2 values and R2 values to R1 valuesGo
Deleted BD Mode from TYPICAL CHARACTERISTICS conditionsGo
Changed legends in Figure 13Go

5 Pin Configuration and Functions

RHB Packaged

32-Pin VQFN With Exposed Thermal Pad

Top View

Pin Functions

PIN		TYPE⁽¹⁾	DESCRIPTION
NO.	NAME	TYPE⁽¹⁾	DESCRIPTION
1	PLIMIT	I	Power limit level adjust. Connect a resistor divider from GVDD to GND to set power limit. Connect directly to GVDD for no power limit.
2	GVDD	PO	Internally generated gate voltage supply. Not to be used as a supply or connected to any component other than a 1uF X7R ceramic decoupling capacitor.
3	GAIN/SLV	I	Sets Gain and selects between Master and Slave mode depending on pin voltage divider.
4	GND	G	Ground
5	INNL	I	Negative audio input for left channel. Biased at 3V.
6	INPL	I	Positive audio input for left channel. Biased at 3V.
7	MUTE	I	Mute signal for fast disable/enable of outputs: HIGH = outputs OFF (high-Z), LOW = outputs ON. TTL logic levels with compliance to AVCC.
8	AM2	I	AM Avoidance Frequency Selection
9	AM1	I	AM Avoidance Frequency Selection
10	AM0	I	AM Avoidance Frequency Selection
11	SYNC	DIO	Clock input/output for synchronizing multiple class-D devices. Direction determined by GAIN/SLV pin. Input signal not to exceed GVDD (7V)
12	AVCC	P	Analog Supply
13	PVCC	P	Power supply
14	PVCC	P	Power supply
15	BSPL	BST	Boot strap for positive left channel output, connect to 220nF X7R ceramic cap to OUTPL
16	OUTPL	PO	Positive left channel output
17	GND	G	Ground
18	OUTNL	PO	Negative left channel output
19	BSNL	BST	Boot strap for negative left channel output, connect to 220nF X7R ceramic cap to OUTNL
20	GND	G	Ground
21	GND	G	Ground
22	BSNR	BST	Boot strap for negative right channel output, connect to 220nF X7R ceramic cap to OUTNR
23	OUTNR	PO	Negative right channel output
24	GND	G	Ground
25	OUTPR	PO	Positive right channel output
26	BSPR	BST	Boot strap for positive right channel output, connect to 220nF X7R ceramic cap to OUTPR
27	PVCC	PI	Power supply
28	PVCC	PI	Power supply
29	SDZ	I	Shutdown logic input for audio amp (LOW = outputs Hi-Z, HIGH = outputs enabled). TTL logic levels with compliance to AVCC.
30	FAULTZ	DO	General fault reporting including Over-current_PVCC, OVP_DVDD FAULT1Z = High, normal operation FAULT1Z = Low, fault condition
31	INPR	I	Positive audio input for right channel. Biased at 3V.
32	INNR	I	Negative audio input for right channel. Biased at 3V.
33	Thermal pad	G	Connect to GND for best system performance. If not connected to GND, leave floating.

(1) TYPE: DO = Digital Output, I = Analog Input, G = General Ground, PO = Power Output, BST = Boot Strap.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
Supply voltage, V_CC	PV_CC, AV_CC	–0.3	30	V
Input voltage, V_I	INPL, INNL, INPR, INNR	–0.3	6.3	V
	PLIMIT, GAIN / SLV, SYNC	–0.3	GVDD+0.3	V
	AM0, AM1, AM2, MUTE, SDZ	–0.3	PVCC+0.3	V
Slew rate, maximum	AM0, AM1, AM2, MUTE, SDZ		10	V/ms
Operating free-air temperature, T_A		–40	85	°C
Operating junction temperature, T_J		–40	150	°C
Storage temperature, T_stg		–40	125	°C

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

			MIN	NOM	MAX	UNIT
V_CC	Supply voltage	PV_CC, AV_CC	4.5		26	V
V_IH	High-level input voltage	AM0, AM1, AM2, MUTE, SDZ, SYNC	2			V
V_IL	Low-level input voltage	AM0, AM1, AM2, MUTE, SDZ, SYNC			0.8	V
V_OL	Low-level output voltage	FAULTZ, R_PULL-UP = 100 kΩ, PV_CC = 26 V			0.8	V
I_IH	High-level input current	AM0, AM1, AM2, MUTE, SDZ (V_I = 2 V, V_CC = 18 V)			50	µA
R_L(BTL)	Minimum load Impedance	Output filter: L = 10 µH, C = 680 nF	3.2	4		Ω
R_L(PBTL)	Minimum load Impedance	Output filter: L = 10 µH, C = 1 µF	1.6			Ω
L_o	Output-filter Inductance	Minimum output filter inductance under short-circuit condition	1			µH

6.4 Thermal Information

THERMAL METRIC⁽¹⁾⁽²⁾		TPA313xD2	UNIT
		VQFN
		32 PINS
R_θJA	Junction-to-ambient thermal resistance	31.3	°C/W
ψ_JT	Junction-to-top characterization parameter	0.2
ψ_JB	Junction-to-board characterization parameter	5.5

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

(2) The heat sink drawing used for the thermal model data are shown in the application section, size: 14mm wide, 50mm long, 25mm high.

6.5 DC Electrical Characteristics

T_A = 25°C, AV_CC = PV_CC = 7.4 V to 26 V, R_L = 8 Ω (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
\| V_OS \|	Class-D output offset voltage (measured differentially)	V_I = 0 V, Gain = 36 dB		1.5	15	mV
I_CC	Quiescent supply current	SDZ = 2 V, No load or filter, PV_CC = 7.4 V (TPA3131D2)		16		mA
I_CC	Quiescent supply current	SDZ = 2 V, No load or filter, PV_CC = 19 V (TPA3132D2)		27		mA
I_CC(SD)	Quiescent supply current in shutdown mode	SDZ = 0.8 V, No load or filter		<50		µA
r_DS(on)	Drain-source on-state resistance, measured pin to pin	PV_CC = 7.4V to 19V V, I_out = 500 mA, T_J = 25°C		120		mΩ
G	Gain (MSTR)	R1 = 5.6 kΩ, R2 = Open	19	20	21	dB
		R1 = 20 kΩ, R2 = 100 kΩ	25	26	27	dB
		R1 = 39 kΩ, R2 = 100 kΩ	31	32	33	dB
		R1 = 47 kΩ, R2 = 75 kΩ	35	36	37	dB
G	Gain (SLV)	R1 = 51 kΩ, R2 = 51 kΩ	19	20	21	dB
		R1 = 75 kΩ, R2 = 47 kΩ	25	26	27	dB
		R1 = 100 kΩ, R2 = 39 kΩ	31	32	33	dB
		R1 = 100 kΩ, R2 = 16 kΩ	35	36	37	dB
t_on	Turn-on time	SDZ = 2 V		10		ms
t_OFF	Turn-off time	SDZ = 0.8 V		2		µs
GVDD	Gate drive supply	IGVDD < 200 µA	6.4	6.9	7.4	V
V_O	Output voltage maximum under PLIMIT control	V(PLIMIT) = 2 V; V_I = 1 V_rms	6.75	7.90	8.75	V

6.6 AC Electrical Characteristics

T_A = 25°C, AV_CC = PV_CC = 7.4 V to 24 V, R_L = 8 Ω (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
KSVR	Power supply ripple rejection	200 mV_PP ripple at 1 kHz, Gain = 20 dB, Inputs AC-coupled to GND		–70		dB
P_O	Continuous output power	R_L = 8 Ω, THD+N = 10%, f = 1 kHz, PV_CC = 7.4 V (TPA3131D2)		4		W
		R_L = 4 Ω, THD+N = 10%, f = 1 kHz, PV_CC = 7.4 V (TPA3131D2)		7.3
		R_L = 8 Ω, THD+N = 10%, f = 1 kHz, PV_CC = 19V (TPA3132D2)		25
		R_L = 4 Ω, THD+N = 10%, f = 1 kHz, PV_CC = 19V (TPA3132D2)		42
THD+N	Total harmonic distortion + noise	R_L = 8 Ω, f = 1 kHz, P_O = 0.1W to 2 W (TPA3132D2) R_L = 8 Ω, f = 1 kHz, P_O = 0.1W to 12.5 W (TPA3131D2)		0.1%
Vn	Output integrated noise	20 Hz to 22 kHz, A-weighted filter, Gain = 20 dB		70		µV
Vn	Output integrated noise	20 Hz to 22 kHz, A-weighted filter, Gain = 20 dB		–80		dBV
	Crosstalk	V_O = 1 V_rms, Gain = 20 dB, f = 1 kHz		–100		dB
SNR	Signal-to-noise ratio	Maximum output at THD+N < 1%, f = 1 kHz, Gain = 20 dB, A-weighted (TPA3131D2, PV_CC = 7.4V)		98		dB
SNR	Signal-to-noise ratio	Maximum output at THD+N < 1%, f = 1 kHz, Gain = 20 dB, A-weighted (TPA3131D2, PV_CC = 19V)		105		dB
f_OSC	Oscillator frequency	AM2=0, AM1=0, AM0=0	376	400	424	kHz
		AM2=0, AM1=0, AM0=1	470	500	530
		AM2=0, AM1=1, AM0=0	564	600	636
		AM2=0, AM1=1, AM0=1	940	1000	1060
		AM2=1, AM1=0, AM0=0	1128	1200	1278
		AM2=1, AM1=0, AM0=1	Reserved
		AM2=1, AM1=1, AM0=0
		AM2=1, AM1=1, AM0=1
	Thermal trip point			150+		°C
	Thermal hysteresis			15		°C
	Over current trip point	TPA3131D2		3.4		A
	Over current trip point	TPA3132D2		7		A