TPS560200 是一款集成 MOSFET 的 17V、500mA、低 Iq 自适应导通时间 D-CAP2 模式同步单片降压转换器,采用简单易用的 5 引脚 SOT-23 封装。
TPS560200 有助于系统设计人员通过具备成本效益、所用组件较少并且待机电流较低的解决方案完成各种终端设备的电源总线调节器集。器件主控制回路采用 D-CAP2 模式控制,无需外部补偿元件即可实现快速瞬态响应。自适应导通时间控制支持器件在高负载条件下的 PWM 模式与轻负载条件下的高级 Eco-mode 工作模式之间实现无缝切换。
TPS560200 的专有电路还可使其适应低等效串联电阻 (ESR) 输出电容(如导电性聚合物钽固体电解电容 (POSCAP) 和导电性聚合物铝电解电容 (SP-CAP))以及超低 ESR 陶瓷电容。该器件由 4.5V 至 17V 范围内的输入电压供电。输出电压可在 0.8 V 至 6.5V 范围内进行编程。该器件还 具有 2ms 固定软启动时间。该器件采用 5 引脚 SOT-23 封装。
器件型号 | 封装 | 封装尺寸(标称值) |
---|---|---|
TPS560200 | SOT (5) | 2.90mm × 1.60mm |
Changes from B Revision (February 2015) to C Revision
Changes from A Revision (Janurary 2015) to B Revision
Changes from * Revision (September 2013) to A Revision
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
EN | 1 | I | Enable pin. Float to enable |
GND | 2 | — | Return for control circuitry and low-side power MOSFET |
PH | 3 | O | The switch node |
VIN | 4 | I | Supplies the control circuitry of the power converter |
VSENSE | 5 | I | Converter feedback input. Connect to output voltage with feedback resistor divider |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage | VIN | –0.3 | 20 | V |
EN | –0.3 | 7 | ||
VSENSE | –0.3 | 3 | ||
Output voltage | PH | –0.6 | 20 | |
PH 10-ns transient | –2 | 20 | ||
Source current | EN | ±100 | µA | |
PH | Current limit | A | ||
Sink current | PH | Current limit | A | |
Operating junction temperature | –40 | 125 | °C | |
Storage temperature, Tstg | –65 | 150 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VI | Input voltage range | 4.5 | 17 | V |
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS560200 | UNIT | |
---|---|---|---|
DBV | |||
5 Pins | |||
RθJA | Junction-to-ambient thermal resistance | 166.8 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 100 | |
RθJB | Junction-to-board thermal resistance | 75.5 | |
ψJT | Junction-to-top characterization parameter | 29.2 | |
ψJB | Junction-to-board characterization parameter | 3.7 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 28.7 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
---|---|---|---|---|---|
SUPPLY VOLTAGE (VIN PIN) | |||||
VIN Operating input voltage | 4.5 | 17 | V | ||
VIN Internal UVLO threshold | VIN Rising | 3.9 | 4.35 | 4.5 | V |
VIN Internal UVLO hysteresis | 200 | mV | |||
VIN Shutdown supply current | EN = 0 V, VIN = 12 V | 2.0 | 3.7 | 9 | µA |
VIN Operating– non switching supply current | VSENSE = 850 mV, VIN = 12 V | 35 | 60 | 95 | µA |
ENABLE (EN PIN) | |||||
Enable threshold | Rising | 1.16 | 1.29 | V | |
Falling | 1.05 | 1.13 | V | ||
Internal Soft-Start | VSENSE ramps from 0 V to 0.8 V | 2 | ms | ||
OUTPUT VOLTAGE | |||||
Voltage reference | 25°C, VIN = 12 V, VOUT = 1.05 V, IOUT = 5 mA, Pulse-Skipping | 0.796 | 0.804 | 0.812 | V |
25°C, VIN = 12 V, VOUT = 1.05 V, IOUT = 100 mA, Continuous current mode | 0.792 | 0.800 | 0.808 | V | |
VIN = 12 V, VOUT = 1.05 V, IOUT = 100 mA, Continuous current mode | 0.789 | 0.800 | 0.811 | V | |
MOSFET | |||||
High-side switch resistance(2)(1) | VIN = 12 V | 0.50 | 0.95 | 1.50 | Ω |
Low-side switch resistance(2) | VIN = 12 V | 0.20 | 0.33 | 0.55 | Ω |
CURRENT LIMIT | |||||
Low-side switch sourcing current limit | LOUT = 10 µH, Valley current, VOUT = 1.05 V | 550 | 650 | 775 | mA |
THERMAL SHUTDOWN | |||||
Thermal shutdown | 170 | °C | |||
Thermal shutdown hysteresis | 10 | °C | |||
ON-TIME TIMER CONTROL | |||||
On time | VIN = 12 V | 130 | 165 | 200 | ns |
Minimum off time | 25°C, VSENSE = 0.5 V | 250 | 400 | ns | |
OUTPUT UNDERVOLTAGE PROTECTION | |||||
Output UVP threshold | Falling | 56 | 63 | 69 | %VREF |
Hiccup time | 15 | ms |