3 说明
TPS735 低压降 (LDO)、低功耗线性稳压器可提供出色的交流性能以及极低的接地电流。可提供高电源抑制比 (PSRR)、低噪声、快速启动以及出色的线路和负载瞬态响应，同时消耗极低的 45μA（典型值）接地电流。
TPS735 器件与陶瓷电容器搭配使用时可保持稳定，并且该器件使用先进的 BiCMOS 制造工艺，能够在输出 500mA 电流时产生 280mV 的典型压降电压。TPS735 器件使用精密电压基准和反馈环路，可在全部负载、线路、过程和温度变化范围内实现 2% 的总体精度 (VOUT > 2.2V)。此器件的额定 TJ = –40°C 至 +125°C，采用薄型 3mm × 3mm SON-8 封装和 2mm × 2mm WSON-6 封装。
- 如需了解所有可用封装，请参阅米6体育平台手机版_好二三四说明书末尾的可订购米6体育平台手机版_好二三四附录。
典型应用
4 修订历史记录
Changes from L Revision (January 2015) to M Revision
- 根据最新米6体育平台手机版_好二三四说明书和翻译标准更新了米6体育平台手机版_好二三四说明书文本Go
- Changed 在文档标题中将“超低噪声”更改成了“低噪声”Go
- Changed 将低 IQ 从 46μA 更改成了 45μA（在特性、说明 和应用信息 部分中）Go
- Changed 将特性 列表中的“标准”更改成了“陶瓷”Go
- Changed 在特性 列表中将 6 引脚封装从“SON”更改成了“WSON”Go
- Deleted 从 应用 部分中删除了“打印机、WiFi®、WiMax 模块、手机、智能手机和微处理器电源”Go
- Added 在应用 部分中添加了“后直流/直流纹波滤除、IP 网络摄像机、大型基站和恒温器”Go
- Changed 将 TA 更改成了 TJ（在说明 部分中）Go
- Changed 在说明 部分中将 6 引脚封装从“SON”更改成了“WSON”Go
- Changed 在器件信息 表中将封装从 VSON (6) 更改成了 WSON (6)Go
- Changed 6-pin DRB package designator from "VSON" to "SON" in Pin Configurations and Functions section Go
- Changed 6-pin DRV package designator from "VSON" to "WSON" in Pin Configurations and Functions section Go
- Added "feedback resistor" parameter to Recommended Operating Conditions tableGo
- Changed DRV package designator from "VSON" to "WSON" in Thermal Information table Go
- Changed DRB package designator from "VSON" to "SON" in Thermal Information table Go
- Changed TPS735 Ground Pin Current (Disable) vs Temperature in Typical Characteristics sectionGo
- Changed TPS735 Dropout Voltage vs Output Current in Typical Characteristics sectionGo
- Updated Equation 1 Go
- Changed x-axis scale from "10 ms/div" to "10 µs/div" in Figure 17Go
- Changed x-axis scale from "10 ms/div" to "10 µs/div" in Figure 18Go
- Changed VOUT starting value to 0 V in Figure 19Go
- Updated Equation 2 Go
- Updated Equation 3 Go
- Changed DRV package designator from "SON" to "WSON" in Measuring Points for TT and TBGo
- Deleted 在相关文档 部分中删除了对热性能信息文档的引用Go
Changes from K Revision (August, 2013) to L Revision
- Added 添加了 ESD 额定值 表、特性 说明 部分、器件功能模式、应用和实施 部分、电源相关建议 部分、 布局 部分、器件和文档支持 部分以及机械、封装和可订购信息 部分Go
- Added 在特性 列表中添加了第一个项目Go
- Changed 将特性 列表中的第四个项目更改成了“1.2V 固定输出”Go
- Changed 更改了特性 列表中的第八个项目Go
- Changed 更改了特性 列表中的最后一个项目Go
- Changed 更改了最后一个应用 列表项Go
- Changed Pin Configuration and Functions section; updated table format and pin descriptions to meet new standards Go
- Changed CNR value notation from 0.01 µF to 10 nF throughout Electrical CharacteristicsGo
- Changed feedback voltage parameter values and measured test conditions Go
- Changed output current limit maximum specified value Go
- Changed power-supply rejection ratio typical specified values for 100 Hz, 10 kHz, and 100 kHz frequency test conditions Go
- Added note (1) to Figure 1Go
- Changed y-axis title for Figure 6Go
- Changed y-axis title for Figure 7Go
- Changed footnote for Figure 13Go
- Changed reference to noise-reduction capacitor (CNR) to feed-forward capacitor (CFF) in Transient ResponseGo
- Changed noise-reduction capacitor to feed-forward capacitor in Figure 16Go
- Changed references to "noise-reduction capacitor" (CNR) to "feed-forward capacitor" (CFF) and section title from "Feedback Capacitor Requirements" to "Feed-forward Capacitor Requirements" in Feed-Forward Capacitor Requirements sectionGo
- Changed CNR value notation from 0.01 µF to 10 nF in Output Noise sectionGo
Changes from J Revision (May, 2011) to K Revision
- Added last sentence to first paragraph of Startup and Noise Reduction Capacitor sectionGo
Changes from I Revision (April, 2011) to J Revision
- Replaced the Dissipation Ratings with Thermal InformationGo
- Revised conditions for Typical Characteristics to include statement about TPS73525 device availabilityGo
- Added Estimating Junction Temperature sectionGo
- Updated Power Dissipation sectionGo
Changes from H Revision (November, 2009) to I Revision
- Corrected typo in Electrical Characteristics table for VOUT specification, DRV package test conditions, VOUT ≤ 2.2VGo
Changes from G Revision (March 2009) to H Revision