3 说明
TPS735 低压降 (LDO)、低功耗线性稳压器可提供出色的交流性能以及极低的接地电流。可提供高电源抑制比 (PSRR)、低噪声、快速启动以及出色的线路和负载瞬态响应，同时消耗极低的 45μA（典型值）接地电流。
TPS735 器件与陶瓷电容器搭配使用时可保持稳定，并且该器件使用先进的 BiCMOS 制造工艺，能够在输出 500mA 电流时产生 280mV 的典型压降电压。TPS735 器件使用精密电压基准和反馈环路，可在全部负载、线路、过程和温度变化范围内实现 2% 的总体精度 (VOUT > 2.2V)。此器件的额定 TJ = –40°C 至 +125°C，采用薄型 3mm × 3mm SON-8 封装和 2mm × 2mm WSON-6 封装。
- 如需了解所有可用封装，请参阅米6体育平台手机版_好二三四说明书末尾的可订购米6体育平台手机版_好二三四附录。
典型应用
4 修订历史记录
Changes from L Revision (January 2015) to M Revision
- 根据最新米6体育平台手机版_好二三四说明书和翻译标准更新了米6体育平台手机版_好二三四说明书文本Go
- Changed 在文档标题中将“超低噪声”更改成了“低噪声”Go
- Changed 将低 IQ 从 46μA 更改成了 45μA（在特性、说明 和应用信息 部分中）Go
- Changed 将特性 列表中的“标准”更改成了“陶瓷”Go
- Changed 在特性 列表中将 6 引脚封装从“SON”更改成了“WSON”Go
- Deleted 从 应用 部分中删除了“打印机、WiFi®、WiMax 模块、手机、智能手机和微处理器电源”Go
- Added 在应用 部分中添加了“后直流/直流纹波滤除、IP 网络摄像机、大型基站和恒温器”Go
- Changed 将 TA 更改成了 TJ（在说明 部分中）Go
- Changed 在说明 部分中将 6 引脚封装从“SON”更改成了“WSON”Go
- Changed 在器件信息 表中将封装从 VSON (6) 更改成了 WSON (6)Go
- Changed 6-pin DRB package designator from "VSON" to "SON" in Pin Configurations and Functions section Go
- Changed 6-pin DRV package designator from "VSON" to "WSON" in Pin Configurations and Functions section Go
- Added "feedback resistor" parameter to Recommended Operating Conditions tableGo
- Changed DRV package designator from "VSON" to "WSON" in Thermal Information table Go
- Changed DRB package designator from "VSON" to "SON" in Thermal Information table Go
- Changed TPS735 Ground Pin Current (Disable) vs Temperature in Typical Characteristics sectionGo
- Changed TPS735 Dropout Voltage vs Output Current in Typical Characteristics sectionGo
- Updated Equation 1 Go
- Changed x-axis scale from "10 ms/div" to "10 µs/div" in Figure 17Go
- Changed x-axis scale from "10 ms/div" to "10 µs/div" in Figure 18Go
- Changed VOUT starting value to 0 V in Figure 19Go
- Updated Equation 2 Go
- Updated Equation 3 Go
- Changed DRV package designator from "SON" to "WSON" in Measuring Points for TT and TBGo
- Deleted 在相关文档 部分中删除了对热性能信息文档的引用Go
Changes from K Revision (August, 2013) to L Revision
- Added 添加了 ESD 额定值 表、特性 说明 部分、器件功能模式、应用和实施 部分、电源相关建议 部分、 布局 部分、器件和文档支持 部分以及机械、封装和可订购信息 部分Go
- Added 在特性 列表中添加了第一个项目Go
- Changed 将特性 列表中的第四个项目更改成了“1.2V 固定输出”Go
- Changed 更改了特性 列表中的第八个项目Go
- Changed 更改了特性 列表中的最后一个项目Go
- Changed 更改了最后一个应用 列表项Go
- Changed Pin Configuration and Functions section; updated table format and pin descriptions to meet new standards Go
- Changed CNR value notation from 0.01 µF to 10 nF throughout Electrical CharacteristicsGo
- Changed feedback voltage parameter values and measured test conditions Go
- Changed output current limit maximum specified value Go
- Changed power-supply rejection ratio typical specified values for 100 Hz, 10 kHz, and 100 kHz frequency test conditions Go
- Added note (1) to Figure 1Go
- Changed y-axis title for Figure 6Go
- Changed y-axis title for Figure 7Go
- Changed footnote for Figure 13Go
- Changed reference to noise-reduction capacitor (CNR) to feed-forward capacitor (CFF) in Transient ResponseGo
- Changed noise-reduction capacitor to feed-forward capacitor in Figure 16Go
- Changed references to "noise-reduction capacitor" (CNR) to "feed-forward capacitor" (CFF) and section title from "Feedback Capacitor Requirements" to "Feed-forward Capacitor Requirements" in Feed-Forward Capacitor Requirements sectionGo
- Changed CNR value notation from 0.01 µF to 10 nF in Output Noise sectionGo
Changes from J Revision (May, 2011) to K Revision
- Added last sentence to first paragraph of Startup and Noise Reduction Capacitor sectionGo
Changes from I Revision (April, 2011) to J Revision
- Replaced the Dissipation Ratings with Thermal InformationGo
- Revised conditions for Typical Characteristics to include statement about TPS73525 device availabilityGo
- Added Estimating Junction Temperature sectionGo
- Updated Power Dissipation sectionGo
Changes from H Revision (November, 2009) to I Revision
- Corrected typo in Electrical Characteristics table for VOUT specification, DRV package test conditions, VOUT ≤ 2.2VGo
Changes from G Revision (March 2009) to H Revision
Pin Configuration and Functions
Pin Functions
| PIN | I/O | DESCRIPTION | ||
|---|---|---|---|---|
| NAME | NO | |||
| DRV | DRB | |||
| IN | 6 | 8 | I | Input supply. A 0.1-µF to 1-µF, low ESR capacitor must be placed from this pin to ground near the device. |
| GND | 3 | 4 | — | Ground. The pad must be tied to GND. |
| EN | 4 | 5 | I | Driving the enable pin (EN) high turns on the regulator. Driving this pin low puts the regulator into shutdown mode. The EN pin can be connected to the IN pin if not used. |
| NR | 2 | 3 | — | This pin is only available for the fixed voltage versions. Connecting an external capacitor to this pin bypasses noise that is generated by the internal band gap and allows the output noise to be reduced to very low levels. The maximum recommended capacitor is 0.01 μF. |
| FB | 2 | 3 | I | This pin is only available for the adjustable version. The FB pin is the input to the control-loop error amplifier, and is used to set the output voltage of the device. This pin must not be left floating. |
| OUT | 1 | 1 | O | This pin is the output of the regulator. A small, 2.2-μF ceramic capacitor is required from this pin to ground to assure stability. The minimum output capacitance required for stability is 2 µF. |
| NC | 5 | 2, 6, 7 | — | Not internally connected. |
| Thermal pad | — | |||