SLPS206B August 2009 – November 2016 CSD16411Q3
PRODUCTION DATA.
1 Features
- Ultra-Low Qg and Qgd
- Low-Thermal Resistance
- Avalanche Rated
- Lead-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 3.3-mm × 3.3-mm Plastic Package
2 Applications
- Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
- Optimized for Control FET Applications
3 Description
This 25-V, 8-mΩ, 3.3-mm × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 25 | V | |
| Qg | Gate Charge Total (4.5 V) | 2.9 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 0.7 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = 4.5 V | 12 | mΩ |
| VGS = 10 V | 8 | |||
| VGS(th) | Threshold Voltage | 2 | V | |
Device Information(1)
| DEVICE | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD16411Q3 | 2500 | 13-Inch Reel | SON 3.30-mm × 3.30-mm Plastic Package |
Tape and Reel |
| CSD16411Q3T | 250 |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 25 | V |
| VGS | Gate-to-Source Voltage | +16 / –12 | V |
| ID | Continuous Drain Current (Package Limited) | 60 | A |
| Continuous Drain Current (Silicon Limited), TC = 25°C | 50 | ||
| Continuous Drain Current(1) | 14 | ||
| IDM | Pulsed Drain Current, TA = 25°C(2) | 130 | A |
| PD | Power Dissipation(1) | 2.87 | W |
| Power Dissipation, TC = 25°C | 35 | ||
| TJ, TSTG |
Operating Junction Storage Temperature |
–55 to 150 | °C |
| EAS | Avalanche Energy, Single Pulse ID = 18 A, L = 0.1 mH, RG = 25 Ω |
16 | mJ |
- RθJA = 45°C/W on 1-in2 Cu (2-oz) on 0.06-in thick FR4 PCB.
- Max RθJC = 3.5°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
RDS(ON) vs VGS |
Gate Charge |