SLPS243G July 2010 – January 2017 CSD17507Q5A
PRODUCTION DATA.
1 Features
- Ultra-Low Qg and Qgd
- Low-Thermal Resistance
- Avalanche Rated
- Lead-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
2 Applications
- Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
- Optimized for Control FET Applications
3 Description
This 30-V, 9-mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View
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Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 30 | V | |
| Qg | Gate Charge Total (4.5 V) | 2.8 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 0.7 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = 4.5 V | 11.8 | mΩ |
| VGS = 10 V | 9 | |||
| VGS(th) | Threshold Voltage | 1.6 | V | |
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Device Information(1)
| DEVICE | MEDIA | QTY | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD17507Q5A | 13-Inch Reel | 2500 | SON 5.00-mm × 6.00-mm Plastic Package |
Tape and Reel |
| CSD17507Q5AT | 7-Inch Reel | 250 |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C (unless otherwise stated) | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 30 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current | 65 | A |
| Continuous Drain Current (Silicon Limited), TC = 25°C | 61 | ||
| Continuous Drain Current(1) | 14 | ||
| IDM | Pulsed Drain Current, TC = 25°C(2) | 163 | A |
| PD | Power Dissipation(1) | 3.1 | W |
| Power Dissipation, TC = 25°C | 39 | ||
| TJ, TSTG |
Operating Junction, Storage Temperature |
–55 to 150 | °C |
| EAS | Avalanche Energy, Single Pulse
ID = 30 A, L = 0.1 mH, RG = 25 Ω |
45 | mJ |
- Typical RθJA = 40°C/W on a 1-in2, 2-oz Cu pad on a
0.06-in thick FR4 PCB. - Max RθJC = 2°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
RDS(on) vs VGS |
Gate Charge |