米6体育平台手机版

ZHCSD14G October 2014 – March 2017 ISO7842

PRODUCTION DATA.

1 特性

信号传输速率：高达 100Mbps
宽电源电压范围：2.25V 至 5.5V
2.25V 至 5.5V 电平转换
宽温度范围：–55°C 至 +125°C
低功耗：电流典型值为 1.7mA/通道（1Mbps 时）
低传播延迟：典型值为 11ns
（5V 电源供电时）
行业领先的 CMTI（最小值）：±100 kV/μs
优异的电磁兼容性 (EMC)
系统级静电放电 (ESD)、瞬态放电 (EFT) 以及抗浪涌保护
低辐射
隔离层寿命：40 年以上
宽体 SOIC-16 封装和超宽体 SOIC-16 封装选项
安全及管理批准：中的“安全及管理批准”列表中的“安全及管理批准”列表
- 8000 V_PK 增强型隔离，符合 DIN V VDE V 0884-10 (VDE V 0884-10)：2006-12
- 符合 UL 1577 标准且长达 1 分钟的 5.7kV_RMS 隔离
- CSA 组件验收通知 5A，IEC 60950-1 和 IEC 60601-1 终端设备标准
- 符合 GB4943.1-2011 标准的 CQC 认证
- 符合 EN 61010-1 和 EN 60950-1 标准的 TUV 认证
- 完成了所有 DW 封装认证；完成了符合 UL、VDE、TUV 标准的 DWW 封装认证并且已针对 CSA 和 CQC 进行了规划

2 应用

工业自动化
电机控制
电源
太阳能逆变器
医疗设备
混合动力电动汽车

3 说明

ISO7842x 器件是一款高性能四通道数字隔离器，隔离电压为 8000V_PK。该器件已通过符合 VDE、CSA、CQC 和 TUV 标准的增强型隔离认证。在隔离互补金属氧化物半导体 (CMOS) 或者低电压互补金属氧化物半导体 (LVCMOS) 数字 I/O 时，该隔离器可提供高电磁抗扰度和低辐射，同时具备低功耗特性。每个隔离通道都有一个由二氧化硅 (SiO₂) 绝缘隔栅分开的逻辑输入和输出缓冲器。

该器件配有使能引脚，可用于将多个主驱动应用中的相应输出置于高阻抗状态，也可用于降低功耗。ISO7842 器件具有 2 个正向通道和 2 个反向通道。如果出现输入功率或信号丢失，ISO7842 器件默认输出高电平，ISO7842F 器件默认输出低电平。有关更多详细信息，请参阅 Device Functional Modes器件功能模式部分。

与隔离式电源结合使用时，该器件有助于防止数据总线或者其他电路中的噪声电流进入本地接地，进而干扰或损坏敏感电路。凭借创新的芯片设计和布线技术，ISO7842 器件的电磁兼容性得到了显著增强，可确保提供系统级 ESD、EFT 和浪涌保护并符合辐射标准。

ISO7842 器件采用 16 引脚 SOIC 宽体 (DW) 和超宽体 (DWW) 封装。

器件信息⁽¹⁾

米6体育平台手机版_好二三四型号	封装	封装尺寸（标称值）
ISO7842 ISO7842F	DW (16)	10.30mm x 7.50mm
ISO7842 ISO7842F	DWW (16)	10.30mm x 14.0mm

要了解所有可用封装，请参阅数据表末尾的可订购米6体育平台手机版_好二三四附录。

简化电路原理图

ISO7842 ISO7842F Simplified_Schematic_sllsei6.gif

V_CCI 和 GNDI 分别是输入通道的电源和接地连接。

V_CCO 和 GNDO 分别是输出通道的电源和接地连接。

4 修订历史记录

Changes from F Revision (April 2016) to G Revision

Changed part numbers in the Power Ratings table (previously Power Dissipation Characteristics) Go
Changed the input-to-output test voltage parameter to apparent charge in the Insulation Specifications Go
Added 接收文档更新通知部分Go

Changes from E Revision (March 2016) to F Revision

Changed 隔离层寿命年数（特性部分）Go
VDE 认证现在已完成Go
Changed V_CCO to V_CCI for the minimum value of the input threshold voltage hysteresis parameter in all electrical characteristics tablesGo
Added V_CM to the test condition of the common-mode transient immunity parameter in all electrical characteristics tablesGo
Added the lifetime projection graphs for DW and DWW packages to the Safety Limiting Values section Go

Changes from D Revision (December 2015) to E Revision

更改了特性Go
在特性中添加了“符合 EN 61010-1 和 EN 60950-1 标准的 TUV 认证”Go
将说明的第一段中的文本从“符合 VDE、CSA 和 CQC 的认证” 更改为“符合 VDE、CSA、CQC 和 TUV 的认证。”Go
Added Note 1 to Insulation Characteristics Go
Changed IEC 60664-1 Ratings TableGo
Added TUV to the Regulatory Information section and Regulatory Information. Deleted Note 1 in Regulatory Information Go
Changed Device I/O Schematics Go

Changes from C Revision (July 2015) to D Revision

在特性中添加了“完成了 DW 封装认证；规划了 DWW 认证”Go
向说明部分添加了文本：“和超宽体 (DWW) 封装”。Go
已将封装“超宽 SOIC、DWW (16)”添加至器件信息表Go
Added the 16-DWW Package to Package Insulation and Safety-Related SpecificationsGo
Added the DWW package information to Package Insulation and Safety-Related SpecificationsGo
Added the DWW package information to Regulatory InformationGo
Changed the MIN value of CMTI in Electrical Characteristics–5-V Supply, 5 V table From: 70 To: 100 kV/μs, deleted the TYP value of 100 kV/μsGo
Added the Supply Current - ISO7842DW and ISO7842FDW section to the Supply Current Characteristics–5-V SupplyGo
Added the Supply Current - ISO7842DWW and ISO7842FDWW section to the Supply Current Characteristics–5-V SupplyGo
Changed the MIN value of CMTI in Electrical Characteristics—3.3-V Supply, 5 V table From: 70 To: 100 kV/μs, deleted the TYP value of 100 kV/μsGo
Added the Supply Current - ISO7842DW and ISO7842FDW section to the Supply Current Characteristics—3.3-V SupplyGo
Added the Supply Current - ISO7842DWW and ISO7842FDWW section to the Supply Current Characteristics—3.3-V SupplyGo
Changed the MIN value of CMTI in Electrical Characteristics—2.5-V Supply, 5 V table From: 70 To: 100 kV/μs, deleted the TYP value of 100 kV/μsGo
Added the Supply Current - ISO7842DW and ISO7842FDW section to the Supply Current Characteristics—2.5-V SupplyGo
Added the Supply Current - ISO7842DWW and ISO7842FDWW section to the Supply Current Characteristics—2.5-V SupplyGo
Added text to the Application Information section: " isolation voltage per UL 1577." Go

Changes from B Revision (April 2015) to C Revision

已添加器件 ISO7482F 至数据表Go
已更改说明以包含“ISO7842 器件默认输出为“高”，ISO7842F 器件默认输出为“低””。Go
Changed Thermal Derating Curve for Safety Limiting Current per VDE , Added Thermal Derating Curve for Safety Limiting Power per VDEGo
Changed From: t_PLH and t_PHLat 5.5V To: t_PLH and t_PHL at 5.0 V Go
Changed Default Output Delay Time Test Circuit and Voltage WaveformsGo
Added the Device I/O Schematics section Go

Changes from A Revision (November 2014) to B Revision

已将文档标题从“四通道数字隔离器”更改为“四通道 2/2 数字隔离器”Go
在特性部分添加了“2.25V 至 5.5V 电平转换”Go
将特性中的“宽体 SOIC-16 封装”更改为“宽体和超宽体 SOIC-16 封装选项”Go
更改了特性Go
VDE 认证现在已完成Go
更改了简化电路原理图并增加了注释 1 和注释 2Go
Added the Power Dissipation Characteristics tableGo
Changed Package Insulation and Safety-Related SpecificationsGo
Changed Insulation Characteristics title From: DIN V VDE 0884-10 (VDE V 0884-10) and UL 1577 Insulation Characteristics To: Insulation CharacteristicsGo
Changed Insulation Characteristics Go
Changed the Test Condition of CTI of the table in Package Insulation and Safety-Related Specifications Go
Changed the MIN value of CTI From" > 600 V To: 600 V Go
Changed the table in Regulatory InformationGo
Changed Switching Characteristics Test Circuit and Voltage Waveforms Go
Changed Enable/Disable Propagation Delay Time Test Circuit and Waveform Go
Changed From: V_CC1 To: V_CCI in Default Output Delay Time Test Circuit and Voltage WaveformsGo
Changed Common-Mode Transient Immunity Test CircuitGo
Deleted INPUT-SIDE and OUTPUT-SIDE from columns 1 and 2 of Function Table Go
Changed the Application Information section Go
Changed the Application Information section Go
Added text and typical circuit hook-up figure to the Detailed Design Procedure section Go

Changes from * Revision (October 2014) to A Revision