ZHCSGY7B October   2017  – January 2018 TPS92830-Q1

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     简化原理图
  4. 修订历史记录
  5. 说明 (续)
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Device Bias
        1. 8.3.1.1 Power-On-Reset (POR)
        2. 8.3.1.2 Current Reference (IREF)
        3. 8.3.1.3 Low-Current Fault Mode
      2. 8.3.2 Charge Pump
        1. 8.3.2.1 Charge Pump Architecture
      3. 8.3.3 Constant-Current Driving
        1. 8.3.3.1 High-Side Current Sense
        2. 8.3.3.2 High-Side Current Driving
        3. 8.3.3.3 Gate Overdrive Voltage Protection
        4. 8.3.3.4 High-Precision Current Regulation
        5. 8.3.3.5 Parallel MOSFET Driving
      4. 8.3.4 PWM Dimming
        1. 8.3.4.1 Supply Dimming
        2. 8.3.4.2 PWM Dimming by Input
        3. 8.3.4.3 Internal Precision PWM Generator
        4. 8.3.4.4 Full Duty-Cycle Switch
      5. 8.3.5 Analog Dimming
        1. 8.3.5.1 Analog Dimming Topology
        2. 8.3.5.2 Internal High-Precision Pullup Current Source
      6. 8.3.6 Output Current Derating
        1. 8.3.6.1 Output-Current Derating Topology
      7. 8.3.7 Diagnostics and Fault
        1. 8.3.7.1 LED Short-to-GND Detection
        2. 8.3.7.2 LED Short-to-GND Auto Retry
        3. 8.3.7.3 LED Open-Circuit Detection
        4. 8.3.7.4 LED Open-Circuit Auto Retry
        5. 8.3.7.5 Dropout-Mode Diagnostics
        6. 8.3.7.6 Overtemperature Protection
        7. 8.3.7.7 FAULT Bus Output With One-Fails–All-Fail
        8. 8.3.7.8 Fault Table
    4. 8.4 Device Functional Modes
      1. 8.4.1 Undervoltage Lockout, V(IN) < V(UVLO)
      2. 8.4.2 Normal Operation (V(IN) ≥ 4.5 V, V(IN) > V(LED) + 0.5 V)
      3. 8.4.3 Low-Voltage Dropout
      4. 8.4.4 Fault Mode (Fault Is Detected)
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application for Automotive Exterior Lighting With One-Fails–All-Fail
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 High-Precision Dual-Brightness PWM Generation
        1. 9.2.2.1 Dual-Brightness Application
        2. 9.2.2.2 Design Requirements
        3. 9.2.2.3 Detailed Design Procedure
        4. 9.2.2.4 Application Curve
      3. 9.2.3 Driving High-Current LEDs With Parallel MOSFETs
        1. 9.2.3.1 Application Curves
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 接收文档更新通知
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

特性

  • 符合 AEC-Q100 标准
    • 器件温度等级 1:环境运行温度范围为 -40°C 至 125°C
    • 器件人体放电模型 (HBM) 静电防护 (ESD) 分类等级 H2
    • 器件组件充电模型 (CDM) ESD 分类等级 C4B
  • 4.5V 至 40V 的宽电压输入范围
  • 3 通道高侧电流驱动和检测
    • 通道独立的电流设置
    • 通道独立的 PWM 输入
    • 通过 PWM 输入和电源实现 PWM 调光
    • 针对 EMC 优化的压摆率
  • 高精度 LED 驱动
    • 采用外部 N 沟道 MOSFET 的精密电流调节(2.5% 容差)
    • 具有非板载 Bin 电阻支持的 20:1 模拟调光配置
    • 具有全占空比屏蔽的精密 PWM 发生器(2% 容差)
    • 用于同步的开漏 PWM 输出
  • 保护和诊断
    • 用于外部 MOSFET 热保护的可调节输出电流降额
    • 具有自动恢复功能的 LED 灯串开路或短路诊断
    • 针对低电压运行支持诊断并具有可调节阈值
    • 多达 15 个器件的故障总线,可配置为连带失效或仅失效的通道关闭
    • 故障模式下具有较低的静态电流(每个器件小于 0.75mA)
  • 工作结温范围:-40°C 至 150°C
  • TSSOP 28 封装 (PW)