ZHCSNE5D October   2020  – February 2024 LMG3522R030-Q1

PRODUCTION DATA  

1.   1
2. 1 特性
3. 2 应用
4. 3 说明
5. 4 Pin Configuration and Functions
6. 5 Specifications
   1. 5.1 Absolute Maximum Ratings
   2. 5.2 ESD Ratings
   3. 5.3 Recommended Operating Conditions
   4. 5.4 Thermal Information
   5. 5.5 Electrical Characteristics
   6. 5.6 Switching Characteristics
   7. 5.7 Typical Characteristics
7. 6 Parameter Measurement Information
   1. 6.1 Switching Parameters
      1. 6.1.1 Turn-On Times
      2. 6.1.2 Turn-Off Times
      3. 6.1.3 Drain-Source Turn-On Slew Rate
8. 7 Detailed Description
   1. 7.1 Overview
   2. 7.2 Functional Block Diagram
   3. 7.3 Feature Description
      1. 7.3.1  GaN FET Operation Definitions
      2. 7.3.2  Direct-Drive GaN Architecture
      3. 7.3.3  Drain-Source Voltage Capability
      4. 7.3.4  Internal Buck-Boost DC-DC Converter
      5. 7.3.5  VDD Bias Supply
      6. 7.3.6  Auxiliary LDO
      7. 7.3.7  Fault Detection
         1. 7.3.7.1 Overcurrent Protection and Short-Circuit Protection
         2. 7.3.7.2 Overtemperature Shutdown
         3. 7.3.7.3 UVLO Protection
         4. 7.3.7.4 Fault Reporting
      8. 7.3.8  Drive-Strength Adjustment
      9. 7.3.9  Temperature-Sensing Output
      10. 7.3.10 Ideal-Diode Mode Operation
          1. 7.3.10.1 Overtemperature-Shutdown Ideal-Diode Mode
   4. 7.4 Start-Up Sequence
   5. 7.5 Safe Operation Area (SOA)
      1. 7.5.1 Repetitive SOA
   6. 7.6 Device Functional Modes
9. 8 Application and Implementation
   1. 8.1 Application Information
   2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
         1. 8.2.2.1 Slew Rate Selection
            1. 8.2.2.1.1 Start-Up and Slew Rate With Bootstrap High-Side Supply
         2. 8.2.2.2 Signal Level-Shifting
         3. 8.2.2.3 Buck-Boost Converter Design
      3. 8.2.3 Application Curves
   3. 8.3 Do's and Don'ts
   4. 8.4 Power Supply Recommendations
      1. 8.4.1 Using an Isolated Power Supply
      2. 8.4.2 Using a Bootstrap Diode
         1. 8.4.2.1 Diode Selection
         2. 8.4.2.2 Managing the Bootstrap Voltage
   5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
         1. 8.5.1.1 Solder-Joint Reliability
         2. 8.5.1.2 Power-Loop Inductance
         3. 8.5.1.3 Signal-Ground Connection
         4. 8.5.1.4 Bypass Capacitors
         5. 8.5.1.5 Switch-Node Capacitance
         6. 8.5.1.6 Signal Integrity
         7. 8.5.1.7 High-Voltage Spacing
         8. 8.5.1.8 Thermal Recommendations
      2. 8.5.2 Layout Examples
10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
       1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 Export Control Notice
    7. 9.7 术语表
11. 10Revision History
12. 11Mechanical, Packaging, and Orderable Information

具有集成驱动器、保护和温度报告功能的 LMG3522R030-Q1 650V 30mΩ GaN FET

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