ZHCSNI0B March   2021  – November 2022 TMUX7411F , TMUX7412F , TMUX7413F

PRODMIX  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Thermal Information
    4. 7.4  Recommended Operating Conditions
    5. 7.5  Electrical Characteristics: Global
    6. 7.6  ±15 V Dual Supply: Electrical Characteristics
    7. 7.7  ±20 V Dual Supply: Electrical Characteristics
    8. 7.8  12 V Single Supply: Electrical Characteristics
    9. 7.9  36 V Single Supply: Electrical Characteristics
    10. 7.10 Typical Characteristics
  8. Parameter Measurement Information
    1. 8.1  On-Resistance
    2. 8.2  Turn-On and Turn-Off Time
    3. 8.3  Off-Leakage Current
    4. 8.4  On-Leakage Current
    5. 8.5  Input and Output Leakage Current Under Overvoltage Fault
    6. 8.6  Fault Response Time
    7. 8.7  Fault Recovery Time
    8. 8.8  Fault Flag Response Time
    9. 8.9  Fault Flag Recovery Time
    10. 8.10 Charge Injection
    11. 8.11 Off Isolation
    12. 8.12 Inter-Channel Crosstalk
    13. 8.13 Bandwidth
    14. 8.14 THD + Noise
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Flat ON-Resistance
      2. 9.3.2 Protection Features
        1. 9.3.2.1 Input Voltage Tolerance
        2. 9.3.2.2 Powered-Off Protection
        3. 9.3.2.3 Fail-Safe Logic
        4. 9.3.2.4 Overvoltage Protection and Detection
        5. 9.3.2.5 ESD Protection
        6. 9.3.2.6 Latch-Up Immunity
        7. 9.3.2.7 EMC Protection
      3. 9.3.3 Overvoltage Fault Flags
      4. 9.3.4 Bidirectional Operation
    4. 9.4 Device Functional Modes
      1. 9.4.1 Normal Mode
      2. 9.4.2 Fault Mode
      3. 9.4.3 Truth Tables
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 术语表
  14. 14Mechanical, Packaging, and Orderable Information

特性

  • 宽电源电压范围:
    • 单电源:8V 至 44V
    • 双电源:±5V 至 ±22V
  • 集成故障保护:
    • 过压保护(从源极到电源或到漏极):±85V
    • 过压保护:±60V
    • 断电保护:±60V
    • 指示故障状态的中断标志
    • 故障期间的输出开路
  • 器件构造可实现闩锁效应抑制
  • 人体放电模型 (HBM) ESD 等级:6kV
  • 低导通电阻:8.3Ω 典型值
  • 平缓的导通电阻:10mΩ 典型值
  • 支持的逻辑电平:1.8V
  • 失效防护逻辑:高达 44V(与电源无关)
  • 业界通用的 TSSOP 封装和较小的 WQFN 封装