LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features

Integrated 15-mΩ GaN FETs and Driver
80-V Continuous, 100-V Pulsed Voltage Rating
Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
Ideal for Isolated and Non-Isolated Applications
Gate Driver Capable of Up to 10 MHz Switching
Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
Supply Rail Undervoltage Lockout Protection
Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
Low Power Consumption

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