ZHCSLA3A
May 2020 – December 2020
LM7481-Q1
PRODUCTION DATA
1
特性
2
应用
3
说明
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Typical Characteristics
7
Parameter Measurement Information
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Charge Pump
8.3.2
Dual Gate Control (DGATE, HGATE)
8.3.2.1
Reverse Battery Protection (A, C, DGATE)
8.3.2.2
Load Disconnect Switch Control (HGATE, OUT)
8.3.3
Over Voltage Protection and Battery Voltage sensing (VSNS, SW, OV)
8.3.4
Low Iq Shutdown and Under Voltage Lockout (EN/UVLO)
8.4
Device Functional Modes
8.5
Application Examples
8.5.1
Redundant Supply OR-ing with Inrush Current Limiting, Over Voltage Protection and ON/OFF Control
9
Application and Implementation
9.1
Application Information
9.2
Typical 12-V Reverse Battery Protection Application
9.2.1
Design Requirements for 12-V Battery Protection
9.2.2
Automotive Reverse Battery Protection
9.2.3
Input Transient Protection: ISO 7637-2 Pulse 1
9.2.4
AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
9.2.5
Input Micro-Short Protection: LV124 E-10
9.2.6
Detailed Design Procedure
9.2.6.1
Design Considerations
9.2.6.2
Charge Pump Capacitance VCAP
9.2.6.3
Input and Output Capacitance
9.2.6.4
Hold-up Capacitance
9.2.6.5
Over Voltage Protection and Battery Monitor
9.2.7
MOSFET Selection: Blocking MOSFET Q1
9.2.8
MOSFET Selection: Hot-Swap MOSFET Q2
9.2.9
TVS selection
9.2.10
Application Curves
9.3
Do's and Don'ts
10
Power Supply Recommendations
10.1
Transient Protection
10.2
TVS Selection for 12-V Battery Systems
10.3
TVS Selection for 24-V Battery Systems
11
Layout
11.1
Layout Guidelines
11.2
Layout Example
12
Device and Documentation Support
12.1
Receiving Notification of Documentation Updates
12.2
Support Resources
12.3
Trademarks
12.4
Electrostatic Discharge Caution
12.5
Glossary
13
Mechanical, Packaging, and Orderable Information
1
特性
符合面向汽车应用的 AEC-Q100 标准
器件温度等级 1:
–40°C 至 +125°C 环境工作温度范围
器件 HBM ESD 分类等级 2
器件 CDM ESD 分类等级 C4B
3V 至 65V 输入范围
反向输入保护低至 –65V
驱动外部背对背 N 沟道 MOSFET
9.1mV 阳极至阴极正向压降调节下,理想二极管正常运行
低反向检测阈值 (–4mV),能够快速响应 (0.5µs)
高达 200KHz 的有源整流
60mA 峰值栅极 (DGATE) 导通电流
2.6A 峰值 DGATE 关断电流
集成 3.8mA 电荷泵
可调节过压保护
2.87µA 低关断电流(EN/UVLO = 低电平)
2.6A 峰值 DGATE 关断电流
采用合适的 TVS 二极管,符合汽车 ISO7637 瞬态要求
采用节省空间的 12 引脚 WSON 封装
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