TPD1E0B04 适用于 USB Type-C 和天线保护的单通道 ESD 保护二极管

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1 特性

IEC 61000-4-2 4 级（接触）静态放电 (ESD) 保护
- ±8kV 接触放电
- ±9kV 气隙放电
IEC 61000-4-4 瞬态放电 (EFT) 保护
- 80A (5/50ns)
IEC 61000-4-5 浪涌保护
- 1.7A (8/20µs)
IO 电容：0.13pF（典型值），
0.15pF（最大值）
直流击穿电压：6.7V（典型值）
超低泄漏电流：10nA（最大值）
低 ESD 钳位电压
支持速率最高达 20Gbps 的高速接口
低插入损耗：大于 30GHz（–3dB 带宽）
工业温度范围：-40°C 至 +125°C
超小型 0201 封装

2 应用

终端设备
- 便携式计算机和台式机
- 手机和平板电脑
- 机顶盒
- 电视和监视器
- USB 软件狗
- 扩展坞
接口
- USB Type-C
- Thunderbolt 3
- USB 3.1 第 2 代
- 高清多媒体接口 (HDMI) 2.0/1.4
- USB 3.0
- DisplayPort 1.3
- PCI Express 3.0
- 天线

3 说明

TPD1E0B04 是一款双向瞬态电压抑制器 (TVS) ESD 保护二极管阵列，用于为 USB Type-C 和 Thunderbolt 3 电路提供保护。TPD1E0B04 的额定 ESD 冲击消散值等于 IEC 61000-4-2（4 级）国际标准中规定的最高水平。

此器件特有一个 0.13pF IO 电容（每通道），适合于保护速率高达 20Gbps 的高速接口，例如 USB 3.1 Gen2、Thunderbolt 3 以及天线接口。低动态电阻和低钳位电压可针对瞬变事件提供系统级保护。

TPD1E0B04 采用符合行业标准的 0201 (DPL) 封装。

器件信息⁽¹⁾

器件型号	封装	封装尺寸（标称值）
TPD1E0B04	X2SON (2)	0.60mm x 0.30mm

要了解所有可用封装，请参见数据表末尾的可订购米6体育平台手机版_好二三四附录。

典型应用

4 修订历史记录

Changes from * Revision (March 2016) to A Revision

已将器件状态由“米6体育平台手机版_好二三四预览”更改为“量产数据”Go

5 Pin Configuration and Functions

DPL Package

2-Pin X2SON

Top View

DPY Package

2-Pin X1SON

Top View

Pin Functions

PIN		I/O	DESCRIPTION
NO.	NAME	I/O	DESCRIPTION
1	IO	I/O	ESD Protected Channel. If used as ESD IO, connect pin 2 to ground
2	IO	I/O	ESD Protected Channel. If used as ESD IO, connect pin 1 to ground

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Electrical fast transient	IEC 61000-4-5 (5/50 ns)		80	A
Peak pulse	IEC 61000-4-5 power (t_p - 8/20 µs)		15	W
Peak pulse	IEC 61000-4-5 current (t_p - 8/20 µs)		1.7	A
T_A	Operating free-air temperature	–40	125	°C
T_stg	Storage temperature	–65	155	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2500	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 ESD Ratings—IEC Specification

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	IEC 61000-4-2 contact discharge	±8000	V
V_(ESD)	Electrostatic discharge	IEC 61000-4-2 air-gap discharge	±9000	V

6.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_IO	Input pin voltage	–3.6	3.6	V
T_A	Operating free-air temperature	–40	125	°C

6.5 Thermal Information

THERMAL METRIC⁽¹⁾		TPD1E0B04	UNIT
		DPL (X2SON)
		2 PINS
R_θJA	Junction-to-ambient thermal resistance	582	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	264.5	°C/W
R_θJB	Junction-to-board thermal resistance	394.4	°C/W
ψ_JT	Junction-to-top characterization parameter	36.4	°C/W
ψ_JB	Junction-to-board characterization parameter	394.4	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	n/a	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage	I_IO < 10 nA	–3.6		3.6	V
V_BRF	Breakdown voltage, IO pin to GND	Measured as the maximum voltage before device snaps back into V_HOLD voltage		6.7		V
V_BRR	Breakdown voltage, GND to IO pin	Measured as the maximum voltage before device snaps back into V_HOLD voltage		–6.7		V
V_HOLD	Holding voltage	I_IO = 1 mA, T_A = 25°C	5	5.7	6.5	V
V_CLAMP	Clamping voltage	I_PP = 1 A, TLP, from IO to GND		7.2		V
		I_PP = 5 A, TLP, from IO to GND		10.1
		I_PP = 16 A, TLP, from IO to GND		19
		I_PP = 1 A, TLP, from GND to IO		7.2
		I_PP = 5 A, TLP, from GND to IO		10.1
		I_PP = 16 A, TLP, from GND to IO		19
I_LEAK	Leakage current, IO to GND	V_IO = ±2.5 V			10	nA
R_DYN	Dynamic resistance	IO to GND		1		Ω
R_DYN	Dynamic resistance	GND to IO		1		Ω
C_L	Line capacitance	V_IO = 0 V, f = 1 MHz, IO to GND T_A = 25°C		0.13	0.15	pF