SLPS533A December   2014  – August 2016 CSD23203W

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD23203W Package Dimensions
    2. 7.2 Land Pattern Recommendation
    3. 7.3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZC|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low RDS(on)
  • Small Footprint
  • Low Profile 0.62-mm Height
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1-mm × 1.5-mm Wafer Level Package

2 Applications

  • Battery Management
  • Load Switch
  • Battery Protection

3 Description

This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.

Top View
CSD23203W Front_Page_r2.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –8 V
Qg Gate Charge Total (–4.5 V) 4.9 nC
Qgd Gate Charge Gate-to-Drain 0.6 nC
RDS(on) Drain-to-Source
On-Resistance
VGS = –1.8 V 35
VGS = –2.5 V 22
VGS = –4.5 V 16.2
VGS(th) Voltage Threshold –0.8 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD23203W 3000 7-Inch Reel 1.00-mm × 1.50-mm
Wafer Level Package
Tape and Reel
CSD23203WT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage –8 V
VGS Gate-to-Source Voltage –6 V
ID Continuous Drain Current(1) –3 A
IDM Pulsed Drain Current(2) –54 A
PD Power Dissipation 0.75 W
TJ,
Tstg
Operating Junction,
Storage Temperature
–55 to 150 °C
  1. Device operating at a temperature of 105ºC.
  2. Typ RθJA = 170°C/W, pulse width ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD23203W D007_SLPS533_r2.gif

Gate Charge

CSD23203W D004_SLPS533_FP_r3.gif