SLPS224C August 2009 – November 2016 CSD16323Q3
PRODUCTION DATA.
- 1Features
- 2Applications
- 3Description
- 4Revision History
- 5Specifications
- 6Device and Documentation Support
- 7Mechanical, Packaging, and Orderable Information
パッケージ・オプション
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
メカニカル・データ（パッケージ｜ピン）
- DQG|8
サーマルパッド・メカニカル・データ
発注情報
1 Features
- Optimized for 5-V Gate Drive
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Lead-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 3.3-mm × 3.3-mm Plastic Package
2 Applications
- Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
- Optimized for Control or Synchronous FET Applications
3 Description
This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.
Top View
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 25 | V | |
| Qg | Gate Charge Total (4.5 V) | 6.2 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 1.1 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = 3 V | 5.4 | mΩ |
| VGS = 4.5 V | 4.4 | |||
| VGS = 8 V | 3.8 | |||
| Vth | Threshold Voltage | 1.1 | V | |
Device Information(1)
| DEVICE | MEDIA | QTY | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD16323Q3 | 13-Inch Reel | 2500 | SON 3.30-mm × 3.30-mm Plastic Package |
Tape and Reel |
| CSD16323Q3T | 7-Inch Reel | 250 |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C (unless otherwise stated) | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 25 | V |
| VGS | Gate-to-Source Voltage | +10 / –8 | V |
| ID | Continuous Drain Current (Package Limit) | 60 | A |
| Continuous Drain Current (Silicon Limited), TC = 25°C | 105 | ||
| Continuous Drain Current(1) | 20 | ||
| IDM | Pulsed Drain Current(2) | 240 | A |
| PD | Power Dissipation(1) | 2.8 | W |
| Power Dissipation, TC = 25°C | 74 | ||
| TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 150 | °C |
| EAS | Avalanche Energy, Single Pulse ID = 50 A, L = 0.1 mH, RG = 25 Ω |
125 | mJ |
- RθJA = 45°C/W on 1-in2, 2-oz Cu pad on 0.06-in thick FR4 PCB.
- Max RθJC = 1.7°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
RDS(on) vs VGS |
Gate Charge |