SLPS393A October 2013 – January 2015 CSD17571Q2
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
This 30 V, 20 mΩ, SON 2×2 NexFET™ power MOSFET is designed to minimize losses in power conversion and load management applications, while offering excellent thermal performance for the size of the package.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V | |
Qg | Gate Charge Total (4.5 V) | 2.4 | nC | |
Qgd | Gate Charge Gate-to-Drain | 0.6 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 24 | mΩ |
VGS = 10 V | 20 | mΩ | ||
VGS(th) | Threshold Voltage | 1.6 | V |
Device | Media | Qty | Package | Ship |
---|---|---|---|---|
CSD17571Q2 | 7-Inch Reel | 3000 | SON 2 x 2 mm Plastic Package | Tape and Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package Limit) | 22 | A |
Continuous Drain Current(1) | 7.6 | A | |
IDM | Pulsed Drain Current, TA = 25°C(2) | 39 | A |
PD | Power Dissipation(1) | 2.5 | W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID = 12 A, L = 0.1 mH, RG = 25 Ω |
7.2 | mJ |
RDS(on) vs VGS |
Gate Charge |