SLPS492B June   2014  – April 2017 CSD17573Q5B

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5B Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q5B Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DNK|8
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Low Qg and Qgd
  • Ultra-Low RDS(on)
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

2 Applications

  • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
  • Optimized for Synchronous FET Applications

3 Description

This 0.84-mΩ, 30-V, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View
CSD17573Q5B P0093-01_LPS198.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 49 nC
Qgd Gate Charge Gate-to-Drain 11.9 nC
RDS(on) Drain-to-Source On Resistance VGS = 4.5 V 1.19 mΩ
VGS = 10 V 0.84
VGS(th) Threshold Voltage 1.4 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD17573Q5B 2500 13-Inch Reel SON
5.00-mm × 6.00-mm
Plastic Package		 Tape and Reel
CSD17573Q5BT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 100 A
Continuous Drain Current (Silicon Limited), TC = 25°C 332
Continuous Drain Current(1) 43
IDM Pulsed Drain Current(2) 400 A
PD Power Dissipation(1) 3.2 W
Power Dissipation, TC = 25°C 195
TJ,
Tstg 		Operating Junction,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse
ID = 76, L = 0.1 mH, RG = 25 Ω		 289 mJ
  1. Typical RθJA = 40°C/W on a 1-in2, 2-oz Cu pad on a
    0.06-in thick FR4 PCB.
  2. Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD17573Q5B graph07_SLPS492.png

Gate Charge

CSD17573Q5B graph04_SLPS492_frontpage.png
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