SLPS444C July 2013 – January 2016 CSD18563Q5A
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
This 5.7 mΩ, 60 V SON 5 mm × 6 mm NexFET™ power MOSFET was designed to pair with the CSD18537NQ5A control FET and act as the sync FET for a complete industrial buck converter chipset solution.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V | |
Qg | Gate Charge Total (10 V) | 15.0 | nC | |
Qgd | Gate Charge Gate-to-Drain | 2.9 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 8.6 | mΩ |
VGS = 10 V | 5.7 | mΩ | ||
VGS(th) | Threshold Voltage | 2.0 | V |
DEVICE | MEDIA | QTY | PACKAGE | SHIP |
---|---|---|---|---|
CSD18563Q5A | 13-Inch Reel | 2500 | SON 5 × 6 mm Plastic Package |
Tape and Reel |
CSD18563Q5AT | 7-Inch Reel | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 100 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 93 | ||
Continuous Drain Current(1) | 15 | ||
IDM | Pulsed Drain Current(2) | 251 | A |
PD | Power Dissipation(1) | 3.2 | W |
Power Dissipation, TC = 25°C | 116 | ||
TJ, Tstg |
Operating Junction Temperature, Storage Temperature |
–55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID = 54 A, L = 0.1 mH, RG = 25 Ω |
146 | mJ |
RDS(on) vs VGS |
Gate Charge |