SLPS261B March 2010 – September 2014 CSD17309Q3
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V | |
Qg | Gate Charge Total (4.5 V) | 7.5 | nC | |
Qgd | Gate Charge Gate-to-Drain | 1.7 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 3 V | 6.3 | mΩ |
VGS = 4.5 V | 4.9 | |||
VGS = 8 V | 4.2 | |||
VGS(th) | Threshold Voltage | 1.2 | V |
Device | Media | Qty | Package | Ship |
---|---|---|---|---|
CSD17309Q3 | 13-Inch Reel | 2500 | SON 3.3 × 3.3 mm Plastic Package | Tape and Reel |
CSD17309Q3T | 7-Inch Reel | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | +10 / –8 | V |
ID | Continuous Drain Current, TC = 25°C | 60 | A |
Continuous Drain Current(1) | 20 | A | |
IDM | Pulsed Drain Current, TA = 25°C(2) | 112 | A |
PD | Power Dissipation(1) | 2.8 | W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse ID = 57 A, L = 0.1 mH, RG = 25 Ω |
162 | mJ |
RDS(on) vs VGS |
Gate Charge |