米6体育平台手机版

SLPS374A November 2012 – September 2014 CSD17559Q5

PRODUCTION DATA.

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）

DQH|8

サーマルパッド・メカニカル・データ

発注情報

slps374a_oa

1 Features

Extremely Low Resistance
Ultra-Low Q_g and Q_gd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5 mm × 6 mm Plastic Package

2 Applications

Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems
Synchronous Rectification
Active ORing and Hotswap Applications

3 Description

This 30 V, 0.95 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

Top View

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	30		V
Q_g	Gate Charge Total (4.5 V)	39		nC
Q_gd	Gate Charge Gate-to-Drain	9.3		nC
R_DS(on)	Drain-to-Source On-Resistance	V_GS= 4.5 V	1.15	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10 V	0.95	mΩ
V_GS(th)	Threshold Voltage	1.4		V

Ordering Information⁽¹⁾

Device	Qty	Media	Package	Ship
CSD17559Q5	2500	13-Inch Reel	SON 5 × 6 mm Plastic Package	Tape and Reel
CSD17559Q5T	250	13-Inch Reel	SON 5 × 6 mm Plastic Package	Tape and Reel

For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	30	V
V_GS	Gate-to-Source Voltage	±20	V
I_D	Continuous Drain Current (Package limited)	100	A
	Continuous Drain Current (Silicon limited), T_C = 25°C	257	A
	Continuous Drain Current⁽¹⁾	40	A
I_DM	Pulsed Drain Current⁽²⁾	400	A
P_D	Power Dissipation⁽¹⁾	3.2	W
P_D	Power Dissipation, T_C = 25°C	96	W
T_J, T_stg	Operating Junction and Storage Temperature Range	–55 to 150	°C
E_AS	Avalanche Energy, single pulse I_D = 104 A, L = 0.1m H, R_G = 25 Ω	541	mJ

Typical R_θJA = 40°C/W on 1 inch² (6.45 cm²), 2 oz.
(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
Max R_θJC = 1.2°C/W, pulse duration ≤100 μs, duty cycle ≤1%