SLPS366E June   2012  – September 2014 CSD18504Q5A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5A Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q5A Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DQJ|8
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

2 Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Battery Motor Control

3 Description

This 5.3 mΩ, SON 5 × 6 mm, 40 V NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View

CSD18504Q5A P0093-01_LPS198.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 40 V
Qg Gate Charge Total (4.5 V) 7.7 nC
Qgd Gate Charge Gate-to-Drain 2.4 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 7.5 mΩ
VGS = 10 V 5.3 mΩ
VGS(th) Threshold Voltage 1.9 V

Ordering Information(1)

Device Qty Media Package Ship
CSD18504Q5A 2500 13-Inch Reel SON 5 mm × 6 mm Plastic Package Tape and Reel
CSD18504Q5AT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 40 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 50 A
Continuous Drain Current (Silicon limited), TC = 25°C 75
Continuous Drain Current(1) 15
IDM Pulsed Drain Current(2) 275 A
PD Power Dissipation(1) 3.1 W
Power Dissipation, TC = 25°C 77
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 43 A, L = 0.1 mH, RG = 25 Ω		 92 mJ
  1. Typical RθJA = 40°C/W on a 1-inch2 , 2-oz. Cu pad on a
    0.06-inch thick FR4 PCB.
  2. Max RθJC = 2.0 °C/W, pulse duration ≤100 μs, duty cycle
    ≤1%

RDS(on) vs VGS

CSD18504Q5A graph07_SLPS366.png

Gate Charge

CSD18504Q5A graph04_SLPS366.png
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |