SLPS586 March   2016 CSD19506KTT

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KTT Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness)

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • KTT|2
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • D2PAK Plastic Package

2 Applications

  • Secondary Side Synchronous Rectifier
  • Motor Control

3 Description

This 80-V, 2.0-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

SPACE

CSD19506KTT FET_Pins.gif

.

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 80 V
Qg Gate Charge Total (10 V) 120 nC
Qgd Gate Charge Gate to Drain 20 nC
RDS(on) Drain-to-Source On Resistance VGS = 6 V 2.2 mΩ
VGS = 10 V 2.0 mΩ
VGS(th) Threshold Voltage 2.5 V

Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD19506KTT 500 13-Inch Reel D2PAK Plastic Package Tape & Reel
CSD19506KTTT 50
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 200 A
Continuous Drain Current (Silicon limited), TC = 25°C 291
Continuous Drain Current (Silicon limited), TC = 100°C 206
IDM Pulsed Drain Current (1) 400 A
PD Power Dissipation 375 W
TJ,
Tstg 		Operating Junction and
Storage Temperature Range		 –55 to 175 °C
EAS Avalanche Energy, single pulse
ID = 129 A, L = 0.1 mH, RG = 25 Ω		 832 mJ
  1. Max RθJC = 0.4°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

CSD19506KTT D007_SLPS586.gif

Gate Charge

CSD19506KTT D004_SLPS586_FP.gif
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