SLPS533A December 2014 – August 2016 CSD23203W
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | –8 | V | |
Qg | Gate Charge Total (–4.5 V) | 4.9 | nC | |
Qgd | Gate Charge Gate-to-Drain | 0.6 | nC | |
RDS(on) | Drain-to-Source On-Resistance |
VGS = –1.8 V | 35 | mΩ |
VGS = –2.5 V | 22 | mΩ | ||
VGS = –4.5 V | 16.2 | mΩ | ||
VGS(th) | Voltage Threshold | –0.8 | V |
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD23203W | 3000 | 7-Inch Reel | 1.00-mm × 1.50-mm Wafer Level Package |
Tape and Reel |
CSD23203WT | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | –8 | V |
VGS | Gate-to-Source Voltage | –6 | V |
ID | Continuous Drain Current(1) | –3 | A |
IDM | Pulsed Drain Current(2) | –54 | A |
PD | Power Dissipation | 0.75 | W |
TJ,
Tstg |
Operating Junction, Storage Temperature |
–55 to 150 | °C |
RDS(on) vs VGS |
Gate Charge |