SNOSDB8A June   2021  – December 2021 LM74701-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Voltage
      2. 8.3.2 Charge Pump
      3. 8.3.3 Gate Driver
      4. 8.3.4 Enable
      5. 8.3.5 Battery Voltage Monitoring (SW)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Conduction Mode
        1. 8.4.2.1 Regulated Conduction Mode
        2. 8.4.2.2 Full Conduction Mode
        3. 8.4.2.3 VDS Clamp Mode
      3. 8.4.3 Reverse Current Protection Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Design Considerations
        2. 9.2.2.2 MOSFET Selection
        3. 9.2.2.3 Charge Pump VCAP (CVCAP) and Input Capacitance (CIN)
        4. 9.2.2.4 Output Capacitance (COUT)
      3. 9.2.3 Application Curves
    3. 9.3 What to Do and What Not to Do
    4. 9.4 OR-ing Application Configuration
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

1 Features

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1:
      –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V startup)
  • –33-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20 mV ANODE to CATHODE forward voltage drop regulation
  • 1-µA shutdown current (EN = Low)
  • 80-µA operating quiescent current (EN = High)
  • 2-A peak gate turn-off current
  • Fast response to reverse current blocking:
    < 0.75 µs
  • Integrated battery voltage monitoring switch (SW)
  • Meets automotive ISO7637 transient requirements without additional input TVS diode (TVS less)
  • 8-Pin SOT-23 package 2.90 mm × 1.60 mm
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