SNOSDD9
December 2022
LM7481
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Typical Characteristics
7
Parameter Measurement Information
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Charge Pump
8.3.2
Dual Gate Control (DGATE, HGATE)
8.3.2.1
Reverse Battery Protection (A, C, DGATE)
8.3.2.2
Load Disconnect Switch Control (HGATE, OUT)
8.3.3
Overvoltage Protection and Battery Voltage sensing (VSNS, SW, OV)
8.3.4
Low Iq Shutdown and Undervoltage Lockout (EN/UVLO)
8.4
Device Functional Modes
8.5
Application Examples
8.5.1
Redundant Supply OR-ing With Inrush Current Limiting, Overvoltage Protection and ON/OFF Control
9
Application and Implementation
9.1
Application Information
9.2
Typical 12-V Reverse Battery Protection Application
9.2.1
Design Requirements for 12-V Battery Protection
9.2.2
Automotive Reverse Battery Protection
9.2.3
Detailed Design Procedure
9.2.3.1
Design Considerations
9.2.3.2
Charge Pump Capacitance VCAP
9.2.3.3
Input and Output Capacitance
9.2.3.4
Hold-up Capacitance
9.2.3.5
Overvoltage Protection and Battery Monitor
9.2.4
MOSFET Selection: Blocking MOSFET Q1
9.2.5
MOSFET Selection: Hot-Swap MOSFET Q2
9.2.6
TVS selection
9.2.7
Application Curves
9.3
Do's and Don'ts
9.4
Power Supply Recommendations
9.4.1
Transient Protection
9.4.2
TVS Selection for 12-V Battery Systems
9.4.3
TVS Selection for 24-V Battery Systems
9.5
Layout
9.5.1
Layout Guidelines
9.5.2
Layout Example
10
Device and Documentation Support
10.1
Receiving Notification of Documentation Updates
10.2
Support Resources
10.3
Trademarks
10.4
Electrostatic Discharge Caution
10.5
Glossary
11
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
DRR|12
MPSS085A
Thermal pad, mechanical data (Package|Pins)
DRR|12
PPTD366A
Orderable Information
snosdd9_oa
snosdd9_pm
1
Features
Qualified for extended temperature applications
Device temperature:
–55°C to +125°C ambient operating temperature range
3-V to 65-V input range
Reverse input protection down to –65 V
Drives external back to back N-channel MOSFETs
Ideal diode operation with 9.1-mV A to C forward voltage drop regulation
Low reverse detection threshold (–4 mV) with fast response (0.5 µs)
Active rectification up to 200-KHz
60-mA peak gate (DGATE) turn-on current
2.6-A peak DGATE turnoff current
Integrated 3.8-mA charge pump
Adjustable overvoltage protection
Low 2.87-µA shutdown current (EN/UVLO=Low)
2.6-A peak DGATE turn-off current
Meets automotive ISO7637 transient requirements with a suitable TVS diode
Available in space saving 12-pin WSON package
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