Passive and discrete

Our portfolio of electrostatic discharge (ESD), transient voltage suppressor (TVS) and Zener diodes includes multiple package and voltage options.

Benefits:

• <0.5pF ESD diodes protect data lines with speeds up to 30GHz, ensuring signal integrity during normal operation.
• Flat-clamp TVS technology provides a reliable solution for dissipating surge transients with a precise, flat, temperature-independent clamping voltage that minimizes residual voltage to the protected system.
• Automotive-grade devices in the portfolio meet stringent standards for systems requiring up to 30kV protection.

Our thin-film Silicon-chromium resistor networks use interdigitation techniques to achieve high element-to-element matching, with resilience to aging and temperature stresses.

Benefits:

• Thin-film SiCr enables a high degree of interdigitation in small form factors while providing lower flicker noise than thick-film solutions.
• On-chip interdigitation effectively allows multiple resistors to occupy the same location on the wafer, ensuring that any variation in thin-film resistive material on the wafer affects all resistors equally.
• Matched resistors achieve extremely low ratiometric temperature coefficients, with typical drift of 0.2ppm/°C or less.

Discrete junction field-effect transistors (JFETs) can achieve much lower noise with comparatively lower power consumption than integrated amplifiers, making them an excellent choice for inductive-type sensors, which may require amplifiers with both low voltage and low current noise.

Benefits:

• Extremely low levels of broadband voltage noise similar to bipolar junction transistors but with the added benefit of extremely low current noise. 
• Single-channel flexibility and dual-channel matching options.
• A pair of JFETs fabricated monolithically on the same die will match each other far better than individual transistors, preventing the introduction of DC offsets in high-gain circuits.

Linear silicon-based thermistors maintain high sensitivity across temperature, enhancing performance and reliability. 

Benefits:

• Eliminate linearization circuitry or hardware-based resistor-capacitor filters.
• Execute faster and more accurate software conversions than negative temperature coefficient (NTC) thermistors while reducing memory requirements.
• Achieve up to 50% higher accuracy than NTC thermistors without multipoint calibration.
• Enable almost 300% faster response times and greater sensitivity at higher temperatures because of lower thermal mass.
• Portfolio includes TI Functional Safety-Capable devices and failure-in-time rate/failure mode distribution documentation.
• Low self-heating minimizes long-term sensor drift.

Bulk acoustic wave (BAW) resonators offer many improvements over existing quartz and micro-electro mechanical resonator technologies. Our portfolio includes oscillators with frequencies from 1MHz to 400MHz, industry-standard packages, low power consumption and a wide supply voltage range.

Benefits:

• BAW-based crystal oscillators offer great reliability including vibration and shock, mean time between failures (MTBF), temperature stability, aging, and environmental factors.
• Achieves less than 100fs of root-mean-square jitter.
• Replacing quartz oscillators with BAW oscillators does not require any design or printed circuit board layout changes.