Home Power management Gate drivers Low-side drivers
Home
Power management
Gate drivers
Low-side drivers

LM5110

ACTIVE

5-A/3-A dual channel gate driver with 4-V UVLO, dedicated input ground, and shutdown input

Order now
Data sheet

A newer version of this product is available

open-in-new Compare alternates
This product continues to be available for existing customers. New designs should consider an alternate product.
Same functionality with different pin-out to the compared device
UCC27624 ACTIVE 5A/5A dual-channel gate driver with 4V UVLO, 30V VDD and low propagation delay Wide VDD and higher driver current

LM5110

ACTIVE
Data sheet Order now

Product details

Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 224 Driver configuration Dual, Independent
Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 224 Driver configuration Dual, Independent
SOIC (D) 8 29.4 mm² 4.9 x 6 WSON (DPR) 10 16 mm² 4 x 4
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A sink/3A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25-ns Typical)
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
  • Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Shutdown Input Provides Low Power Mode
  • Supply Rail Undervoltage Lockout Protection
  • Pin-Out Compatible With Industry Standard Gate Drivers
  • Packages:
    • SOIC-8
    • WSON-10 (4 mm × 4 mm)
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A sink/3A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25-ns Typical)
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
  • Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Shutdown Input Provides Low Power Mode
  • Supply Rail Undervoltage Lockout Protection
  • Pin-Out Compatible With Industry Standard Gate Drivers
  • Packages:
    • SOIC-8
    • WSON-10 (4 mm × 4 mm)

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.
filter Find other Low-side drivers
Download View video with transcript Video

Similar products you might be interested in

open-in-new Compare alternates
Same functionality with different pin-out to the compared device
UCC27524A ACTIVE 5-A/5-A dual-channel gate driver with 5-V UVLO, enable, and negative input voltage handling This product has higher drive current with 5-A sink/source, as well as faster propagation delay (13-ns) , rise time (7-ns) and fall time (6-ns).

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 6
Type Title Date
* Data sheet LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability datasheet (Rev. B) PDF | HTML 05 Nov 2012
Application note Why use a Gate Drive Transformer? PDF | HTML 04 Mar 2024
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018
Selection guide Power Management Guide 2018 (Rev. R) 25 Jun 2018

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC27423-4-5-Q1EVM — UCC2742xQ1 Dual 4-A High-Speed Low-Side MOSFET Drivers With Enable Evaluation Module (EVM)

The UCC2742xQ1 EVM is a high-speed dual MOSFET evaluation module that provides a test platform for a quick and easy startup of the UCC2742xQ1 driver. Powered by a single 4V to 15V external supply, and featuring a comprehensive set of test points and jumpers. All of the devices have separate input (...)
User guide: PDF
Not available on TI.com
Simulation model

LM5110-1M PSpice Transient Model (Rev. A)

SNVM295A.ZIP (57 KB) - PSpice Model
Download
Simulation model

LM5110-1M TINA-TI Transient Reference Design

SNVM406.TSC (135 KB) - TINA-TI Reference Design
Download
Simulation model

LM5110-1M TINA-TI Transient Spice Model

SNVM407.ZIP (10 KB) - TINA-TI Spice Model
Download
Simulation model

LM5110-2M PSpice Transient Model

SNVM308.ZIP (47 KB) - PSpice Model
Download
Simulation model

LM5110-2M TINA-TI Transient Reference Design

SNVM408.TSC (135 KB) - TINA-TI Reference Design
Download
Simulation model

LM5110-2M TINA-TI Transient Spice Model

SNVM409.ZIP (10 KB) - TINA-TI Spice Model
Download
Simulation model

LM5110-3M PSpice Transient Model

SNVM309.ZIP (47 KB) - PSpice Model
Download
Simulation model

LM5110-3M TINA-TI Transient Reference Design

SNVM412.TSC (136 KB) - TINA-TI Reference Design
Download
Simulation model

LM5110-3M TINA-TI Transient Spice Model

SNVM413.ZIP (10 KB) - TINA-TI Spice Model
Download
Simulation model

LM5110_1M Unencrypted PSpice Transient Model

SNVMAD0.ZIP (1 KB) - PSpice Model
Download
Simulation model

LM5110_2M Unencrypted PSpice Transient Model

SNVMAC9.ZIP (1 KB) - PSpice Model
Download
Simulation model

LM5110_3M Unencrypted PSpice Transient Model

SNVMAD1.ZIP (1 KB) - PSpice Model
Download
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Request
Package Pins CAD symbols, footprints & 3D models
SOIC (D) 8 Ultra Librarian
WSON (DPR) 10 Ultra Librarian
TI's Standard Terms and Conditions for Evaluation Items apply.

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

Support & training

TI E2E™ forums with technical support from TI engineers

View all forum topics

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos