The LMG3425R050 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG3425R050 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.
Advanced power management features include digital temperature reporting, fault detection, and ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin. Ideal diode mode reduces third-quadrant losses by enabling dead-time control.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | LMG3425R050 600 V 50 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet | PDF | HTML | 08 Mar 2024 |
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.