TPL7407L

Name: TPL7407L
Brand: TI
SKU: TPL7407L
Price: 0.176 USD

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40-V, 7-ch NMOS array low-side driver

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Data sheet

document-pdfAcrobat TPL7407L 40-V 7-Channel Low Side Driver datasheet (Rev. D) PDF | HTML

TPL7407L

ACTIVE

Data sheet

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Product details

Drivers per package

7

Switching voltage (max) (V)

40

Output voltage (max) (V)

40

Peak output current (A)

0.5

Delay time (typ) (ns)

250

Input compatibility

CMOS, TTL

Vol at lowest spec current (typ) (mV)

200

Iout/ch (max) (mA)

600

Iout_off (typ) (µA)

0.01

Rating

Catalog

Operating temperature range (°C)

-40 to 125

FET

Internal

Imax (A)

0.6

Device type

Low-side switches

Function

Inductive load compatibility

Drivers per package

7

Switching voltage (max) (V)

40

Output voltage (max) (V)

40

Peak output current (A)

0.5

Delay time (typ) (ns)

250

Input compatibility

CMOS, TTL

Vol at lowest spec current (typ) (mV)

200

Iout/ch (max) (mA)

600

Iout_off (typ) (µA)

0.01

Rating

Catalog

Operating temperature range (°C)

-40 to 125

FET

Internal

Imax (A)

0.6

Device type

Low-side switches

Function

Inductive load compatibility

SOIC (D)

16

59.4 mm² 9.9 x 6

TSSOP (PW)

16

32 mm² 5 x 6.4

600-mA Rated Drain Current (Per Channel)
CMOS Pin-to-Pin Improvement of 7-channel
Darlington Array (e.g. ULN2003A)
Power Efficient (Very low V_OL)
- Less Than 4 Times Lower V_OL at 100 mA Than
  Darlington Array
Very Low Output Leakage < 10 nA Per Channel
Extended Ambient Temperature Range:
T_A = –40°C to 125°C
High-Voltage Outputs 40 V
Compatible with 1.8-V to 5.0-V Micro-controllers
and Logic Interface
Internal Free-wheeling Diodes for Inductive Kick-
back Protection
Input Pull-down Resistors Allows Tri-stating the
Input Driver
Input RC-Snubber to Eliminate Spurious
Operation in Noisy Environment
Inductive Load Driver Applications
ESD Protection Exceeds JESD 22
- 2-kV HBM, 500-V CDM
Available in 16-pin SOIC and TSSOP Packages

600-mA Rated Drain Current (Per Channel)
CMOS Pin-to-Pin Improvement of 7-channel
Darlington Array (e.g. ULN2003A)
Power Efficient (Very low V_OL)
- Less Than 4 Times Lower V_OL at 100 mA Than
  Darlington Array
Very Low Output Leakage < 10 nA Per Channel
Extended Ambient Temperature Range:
T_A = –40°C to 125°C
High-Voltage Outputs 40 V
Compatible with 1.8-V to 5.0-V Micro-controllers
and Logic Interface
Internal Free-wheeling Diodes for Inductive Kick-
back Protection
Input Pull-down Resistors Allows Tri-stating the
Input Driver
Input RC-Snubber to Eliminate Spurious
Operation in Noisy Environment
Inductive Load Driver Applications
ESD Protection Exceeds JESD 22
- 2-kV HBM, 500-V CDM
Available in 16-pin SOIC and TSSOP Packages

The TPL7407L is a high-voltage, high-current NMOS transistor array. This device consists of seven NMOS transistors that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The maximum drain-current rating of a single NMOS channel is 600 mA. New regulation and drive circuitry added to give maximum drive strength across all GPIO ranges (1.8 V – 5.0 V).The transistors can be paralleled for higher current capability.

The TPL7407L’s key benefit is its improved power efficiency and lower leakage than a Bipolar Darlington Implementation. With the lower V_OL the user is dissipating less than half the power than traditional relay drivers with currents less than 250 mA per channel.

The TPL7407L is a high-voltage, high-current NMOS transistor array. This device consists of seven NMOS transistors that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The maximum drain-current rating of a single NMOS channel is 600 mA. New regulation and drive circuitry added to give maximum drive strength across all GPIO ranges (1.8 V – 5.0 V).The transistors can be paralleled for higher current capability.

The TPL7407L’s key benefit is its improved power efficiency and lower leakage than a Bipolar Darlington Implementation. With the lower V_OL the user is dissipating less than half the power than traditional relay drivers with currents less than 250 mA per channel.

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