The UCC27517A single-channel, high-speed, low-side gate driver device is capable of
effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes
shoot-through current, the UCC27517A is capable of sourcing and sinking high peak-current pulses
into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay
typically 13 ns.
The UCC27517A device is capable of handling –5 V at input.
The UCC27517A provides 4-A source and 4-A sink (symmetrical drive) peak-drive current
capability at VDD = 12 V.
The UCC27517A is designed to operate over a wide VDD range of 4.5 V to 18 V and wide
temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin
holds output low outside VDD operating range. The capability to operate at low voltage levels such
as below 5 V, along with best-in-class switching characteristics, is especially suited for driving
emerging wide band-gap power-switching devices such as GaN power semiconductor devices.
UCC27517A features a dual input design which offers flexibility of implementing both
inverting (IN– pin) and non-inverting (IN+ pin) configurations with the same device. Either the IN+
or IN– pin can be used to control the state of the driver output. The unused input pin can be used
for enable and disable function. For protection purpose, internal pullup and pulldown resistors on
the input pins ensure that outputs are held low when input pins are in floating condition. Hence
the unused input pin is not left floating and must be properly biased to ensure that driver output
is in enabled for normal operation.
The input pin threshold of the UCC27517A device is based on TTL and CMOS compatible
low-voltage logic which is fixed and independent of the VDD supply voltage. Wide hysteresis between
the high and low thresholds offers excellent noise immunity.
The UCC27517A single-channel, high-speed, low-side gate driver device is capable of
effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes
shoot-through current, the UCC27517A is capable of sourcing and sinking high peak-current pulses
into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay
typically 13 ns.
The UCC27517A device is capable of handling –5 V at input.
The UCC27517A provides 4-A source and 4-A sink (symmetrical drive) peak-drive current
capability at VDD = 12 V.
The UCC27517A is designed to operate over a wide VDD range of 4.5 V to 18 V and wide
temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin
holds output low outside VDD operating range. The capability to operate at low voltage levels such
as below 5 V, along with best-in-class switching characteristics, is especially suited for driving
emerging wide band-gap power-switching devices such as GaN power semiconductor devices.
UCC27517A features a dual input design which offers flexibility of implementing both
inverting (IN– pin) and non-inverting (IN+ pin) configurations with the same device. Either the IN+
or IN– pin can be used to control the state of the driver output. The unused input pin can be used
for enable and disable function. For protection purpose, internal pullup and pulldown resistors on
the input pins ensure that outputs are held low when input pins are in floating condition. Hence
the unused input pin is not left floating and must be properly biased to ensure that driver output
is in enabled for normal operation.
The input pin threshold of the UCC27517A device is based on TTL and CMOS compatible
low-voltage logic which is fixed and independent of the VDD supply voltage. Wide hysteresis between
the high and low thresholds offers excellent noise immunity.