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SN74ABT245B-EP

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具有三态输出的八路总线收发器（增强型米6体育平台手机版_好二三四）

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SN74ABT245B-EP

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米6体育平台手机版_好二三四详情

Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 64 IOH (max) (mA) -32 Input type TTL Output type TTL Features Over-voltage tolerant inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns) Technology family ABT Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125
Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 64 IOH (max) (mA) -32 Input type TTL Output type TTL Features Over-voltage tolerant inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns) Technology family ABT Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125
SSOP (DB) 20 56.16 mm² 7.2 x 7.8
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Typical VOLP (Output Ground Bounce)
       <1 V at VCC = 5 V, TA = 25°C
  • Ioff and Power-Up 3-State Support Hot Insertion
  • High-Drive Outputs (–24-mA IOH, 32-mA IOL)
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD 17
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Typical VOLP (Output Ground Bounce)
       <1 V at VCC = 5 V, TA = 25°C
  • Ioff and Power-Up 3-State Support Hot Insertion
  • High-Drive Outputs (–24-mA IOH, 32-mA IOL)
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD 17
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

This octal bus transceiver is designed for asynchronous communication between data buses. The device transmits data from the A bus to the B bus or from the B bus to the A bus, depending on the logic level at the direction-control (DIR) input. The output-enable (OE)\ input can be used to disable the device so the buses are effectively isolated.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

This device is fully specified for hot-insertion applications using Ioff and power-up 3-state. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. The power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down, which prevents driver conflict.

This octal bus transceiver is designed for asynchronous communication between data buses. The device transmits data from the A bus to the B bus or from the B bus to the A bus, depending on the logic level at the direction-control (DIR) input. The output-enable (OE)\ input can be used to disable the device so the buses are effectively isolated.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

This device is fully specified for hot-insertion applications using Ioff and power-up 3-state. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. The power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down, which prevents driver conflict.
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类型 标题 下载最新的英语版本 日期
* 数据表 SN74ABT245B-EP 数据表 2004年 1月 30日
* VID SN74ABT245B-EP VID V6204738 2016年 6月 21日
应用手册 Implications of Slow or Floating CMOS Inputs (Rev. E) 2021年 7月 26日
选择指南 Logic Guide (Rev. AB) 2017年 6月 12日
应用手册 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
选择指南 逻辑器件指南 2014 (Rev. AA) 最新英语版本 (Rev.AB) 2014年 11月 17日
选择指南 《高级总线接口逻辑器件选择指南》 英语版 2010年 7月 7日
用户指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
应用手册 选择正确的电平转换解决方案 (Rev. A) 英语版 (Rev.A) 2006年 3月 23日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
应用手册 Quad Flatpack No-Lead Logic Packages (Rev. D) 2004年 2月 16日
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应用手册 Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 2002年 5月 10日
应用手册 Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 1997年 8月 1日
应用手册 Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 1997年 6月 1日
应用手册 使用逻辑器件进行设计 (Rev. C) 1997年 6月 1日
应用手册 Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 1997年 3月 1日
应用手册 Family of Curves Demonstrating Output Skews for Advanced BiCMOS Devices (Rev. A) 1996年 12月 1日
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SSOP (DB) 20 Ultra Librarian
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订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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