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SN74ABT541B-EP

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具有 TTL 兼容型 CMOS 输入和三态输出的 8 通道、4.5V 至 5.5V 缓冲器（增强型米6体育平台手机版_好二三四）

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SN74ABT541B-EP

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米6体育平台手机版_好二三四详情

Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 64 Supply current (max) (µA) 30000 IOH (max) (mA) -32 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 85
Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 64 Supply current (max) (µA) 30000 IOH (max) (mA) -32 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 85
TSSOP (PW) 20 41.6 mm² 6.5 x 6.4
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
EPIC-IIB is a trademark of Texas Instruments.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
EPIC-IIB is a trademark of Texas Instruments.

The SN74ABT541B octal buffer and line driver is ideal for driving bus lines or buffering memory address registers. The device features inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1\ or OE2)\ input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74ABT541B octal buffer and line driver is ideal for driving bus lines or buffering memory address registers. The device features inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1\ or OE2)\ input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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类型 标题 下载最新的英语版本 日期
* 数据表 SN74ABT541B-EP 数据表 2004年 1月 6日
* VID SN74ABT541B-EP VID V6204700 2016年 6月 21日
应用手册 Implications of Slow or Floating CMOS Inputs (Rev. E) 2021年 7月 26日
选择指南 Logic Guide (Rev. AB) 2017年 6月 12日
应用手册 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
选择指南 逻辑器件指南 2014 (Rev. AA) 最新英语版本 (Rev.AB) 2014年 11月 17日
选择指南 《高级总线接口逻辑器件选择指南》 英语版 2010年 7月 7日
用户指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
应用手册 选择正确的电平转换解决方案 (Rev. A) 英语版 (Rev.A) 2006年 3月 23日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
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应用手册 TI IBIS File Creation, Validation, and Distribution Processes 2002年 8月 29日
应用手册 Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 2002年 5月 10日
应用手册 Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 1997年 8月 1日
应用手册 Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 1997年 6月 1日
应用手册 使用逻辑器件进行设计 (Rev. C) 1997年 6月 1日
应用手册 Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 1997年 3月 1日
应用手册 Family of Curves Demonstrating Output Skews for Advanced BiCMOS Devices (Rev. A) 1996年 12月 1日
应用手册 Input and Output Characteristics of Digital Integrated Circuits 1996年 10月 1日
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