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D 型锁存器

SN74ABT573A

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具有三态输出的八路透明 D 类锁存器

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数据表

SN74ABT573A

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米6体育平台手机版_好二三四详情

Number of channels 8 Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Input type TTL-Compatible CMOS Output type 3-State Clock frequency (max) (MHz) 150 IOL (max) (mA) 64 IOH (max) (mA) -32 Supply current (max) (µA) 30000 Features Flow-through pinout, Partial power down (Ioff), Power up 3-state, Very high speed (tpd 5-10ns) Operating temperature range (°C) -40 to 85 Rating Catalog
Number of channels 8 Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Input type TTL-Compatible CMOS Output type 3-State Clock frequency (max) (MHz) 150 IOL (max) (mA) 64 IOH (max) (mA) -32 Supply current (max) (µA) 30000 Features Flow-through pinout, Partial power down (Ioff), Power up 3-state, Very high speed (tpd 5-10ns) Operating temperature range (°C) -40 to 85 Rating Catalog
PDIP (N) 20 228.702 mm² 24.33 x 9.4 SOIC (DW) 20 131.84 mm² 12.8 x 10.3 SSOP (DB) 20 56.16 mm² 7.2 x 7.8 TSSOP (PW) 20 41.6 mm² 6.5 x 6.4 VQFN (RGY) 20 15.75 mm² 4.5 x 3.5
  • Typical VOLP (Output Ground Bounce)
       <1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD 17
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
  • Typical VOLP (Output Ground Bounce)
       <1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD 17
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)

These 8-bit latches feature 3-state outputs designed specifically for driving highly capacitive or relatively low-impedance loads. They are particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers.

The eight latches of the SN54ABT573 and SN74ABT573A are transparent D-type latches. While the latch-enable (LE) input is high, the Q outputs follow the data (D) inputs. When LE is taken low, the Q outputs are latched at the logic levels set up at the D inputs.

A buffered output-enable (OE)\ input can be used to place the eight outputs in either a normal logic state (high or low logic levels) or the high-impedance state. In the high-impedance state, the outputs neither load nor drive the bus lines significantly. The high-impedance state and increased drive provide the capability to drive bus lines without need for interface or pullup components.

OE\ does not affect the internal operations of the latches. Old data can be retained or new data can be entered while the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

These 8-bit latches feature 3-state outputs designed specifically for driving highly capacitive or relatively low-impedance loads. They are particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers.

The eight latches of the SN54ABT573 and SN74ABT573A are transparent D-type latches. While the latch-enable (LE) input is high, the Q outputs follow the data (D) inputs. When LE is taken low, the Q outputs are latched at the logic levels set up at the D inputs.

A buffered output-enable (OE)\ input can be used to place the eight outputs in either a normal logic state (high or low logic levels) or the high-impedance state. In the high-impedance state, the outputs neither load nor drive the bus lines significantly. The high-impedance state and increased drive provide the capability to drive bus lines without need for interface or pullup components.

OE\ does not affect the internal operations of the latches. Old data can be retained or new data can be entered while the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
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SN74AHCT573 正在供货 具有三态输出的八路透明 D 类锁存器 Larger voltage range (4.5V to 5.5V)

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类型 标题 下载最新的英语版本 日期
* 数据表 SN54ABT573, SN74ABT573A 数据表 (Rev. F) 2003年 9月 9日
应用手册 Power-Up Behavior of Clocked Devices (Rev. B) PDF | HTML 2022年 12月 15日
应用手册 Implications of Slow or Floating CMOS Inputs (Rev. E) 2021年 7月 26日
选择指南 Logic Guide (Rev. AB) 2017年 6月 12日
应用手册 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
选择指南 逻辑器件指南 2014 (Rev. AA) 最新英语版本 (Rev.AB) 2014年 11月 17日
选择指南 《高级总线接口逻辑器件选择指南》 英语版 2010年 7月 7日
用户指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
应用手册 选择正确的电平转换解决方案 (Rev. A) 英语版 (Rev.A) 2006年 3月 23日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
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应用手册 Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 1997年 8月 1日
应用手册 Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 1997年 6月 1日
应用手册 使用逻辑器件进行设计 (Rev. C) 1997年 6月 1日
应用手册 Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 1997年 3月 1日
应用手册 Family of Curves Demonstrating Output Skews for Advanced BiCMOS Devices (Rev. A) 1996年 12月 1日
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封装 引脚 CAD 符号、封装和 3D 模型
PDIP (N) 20 Ultra Librarian
SOIC (DW) 20 Ultra Librarian
SSOP (DB) 20 Ultra Librarian
TSSOP (PW) 20 Ultra Librarian
VQFN (RGY) 20 Ultra Librarian
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订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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