SN74CB3Q16811
- Member of the Texas Instruments Widebus™ Family
- SN74CB3Q Bus Switches Are Equivalent to IDTQS3VH Bus Switches
- 5-V-Tolerant I/Os with Device Powered-Up or Powered-Down
- Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range
- Rail-to-Rail Switching on Data I/O Ports
- 0- to 5-V Switching With 3.3-V VCC
- 0- to 3.3-V Switching With 2.5-V VCC
- B-Port Outputs Are Precharged by Bias Voltage (BIASV) to Minimize Signal Distortion During Live Insertion and Hot-Plugging
- Supports PCI Hot Plug
- Bidirectional Data Flow, With Near-Zero Propagation Delay
- Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 4 pF Typ)
- Fast Switching Frequency (fON\ = 20 MHz Max)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 0.75 mA Typ)
- VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
- Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports Both Digital and Analog Applications: PCI Hot Plug, Hot Docking, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.
Widebus is a trademark of Texas Instruments.
The SN74CB3Q16811 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16811 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q16811 is organized as two 12-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. When OE\ is low, the associated 12-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 12-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. The B port is precharged to BIASV through the equivalent of a 10-k
resistor when OE\ is high, or if the device is powered down (VCC = 0 V).
During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down.
To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
技术文档
| 类型 | 标题 | 下载最新的英语版本 | 日期 | |||
|---|---|---|---|---|---|---|
| * | 数据表 | SN74CB3Q16811 数据表 (Rev. B) | 2004年 8月 3日 | |||
| 应用手册 | 选择正确的米6体育平台手机版_好二三四 (TI) 信号开关 (Rev. E) | PDF | HTML | 英语版 (Rev.E) | PDF | HTML | 2022年 8月 5日 | |
| 应用手册 | CBT-C、CB3T 和 CB3Q 信号开关系列 (Rev. C) | PDF | HTML | 英语版 (Rev.C) | PDF | HTML | 2022年 3月 11日 | |
| 应用手册 | 多路复用器和信号开关词汇表 (Rev. B) | 英语版 (Rev.B) | PDF | HTML | 2022年 3月 11日 | ||
| 应用简报 | 利用关断保护信号开关消除电源时序 (Rev. C) | 英语版 (Rev.C) | PDF | HTML | 2021年 10月 21日 | ||
| 选择指南 | Logic Guide (Rev. AB) | 2017年 6月 12日 | ||||
| 应用手册 | Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) | 2015年 12月 2日 | ||||
| 选择指南 | 逻辑器件指南 2014 (Rev. AA) | 最新英语版本 (Rev.AB) | 2014年 11月 17日 | |||
| 用户指南 | LOGIC Pocket Data Book (Rev. B) | 2007年 1月 16日 | ||||
| 更多文献资料 | Digital Bus Switch Selection Guide (Rev. A) | 2004年 11月 10日 | ||||
| 应用手册 | Semiconductor Packing Material Electrostatic Discharge (ESD) Protection | 2004年 7月 8日 | ||||
| 用户指南 | Signal Switch Data Book (Rev. A) | 2003年 11月 14日 | ||||
| 应用手册 | Bus FET Switch Solutions for Live Insertion Applications | 2003年 2月 7日 |
设计和开发
如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| TSSOP (DGG) | 56 | Ultra Librarian |
| TVSOP (DGV) | 56 | Ultra Librarian |
订购和质量
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
- 制造厂地点
- 封装厂地点
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