SN74CBT16245C
- Member of the Texas Instruments Widebus™ Family
- Undershoot Protection for Off-Isolation on A and B Ports Up to –2 V
- Bidirectional Data Flow, With Near-Zero Propagation Delay
- Low ON-State Resistance (ron) Characteristics (ron = 3
Typical) - Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 3 µA Max)
- VCC Operating Range From 4 V to 5.5 V
- Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
- Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports Both Digital and Analog Applications: PCI Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
Widebus is a trademark of Texas Instruments.
The SN74CBT16245C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT16245C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.
The SN74CBT16245C is organized as two 8-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 8-bit bus switches or as one 16-bit bus switch. When OE\ is low, the associated 8-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 8-bit bus switch is OFF and the high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
技术文档
| 类型 | 标题 | 下载最新的英语版本 | 日期 | |||
|---|---|---|---|---|---|---|
| * | 数据表 | SN74CBT16245C 数据表 | 2003年 10月 6日 | |||
| 应用手册 | 选择正确的米6体育平台手机版_好二三四 (TI) 信号开关 (Rev. E) | PDF | HTML | 英语版 (Rev.E) | PDF | HTML | 2022年 8月 5日 | |
| 应用手册 | CBT-C、CB3T 和 CB3Q 信号开关系列 (Rev. C) | PDF | HTML | 英语版 (Rev.C) | PDF | HTML | 2022年 3月 11日 | |
| 应用手册 | 多路复用器和信号开关词汇表 (Rev. B) | 英语版 (Rev.B) | PDF | HTML | 2022年 3月 11日 | ||
| 应用简报 | 利用关断保护信号开关消除电源时序 (Rev. C) | 英语版 (Rev.C) | PDF | HTML | 2021年 10月 21日 | ||
| 选择指南 | Little Logic Guide 2018 (Rev. G) | 2018年 7月 6日 | ||||
| 选择指南 | Logic Guide (Rev. AB) | 2017年 6月 12日 | ||||
| 应用手册 | Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) | 2015年 12月 2日 | ||||
| 选择指南 | 逻辑器件指南 2014 (Rev. AA) | 最新英语版本 (Rev.AB) | 2014年 11月 17日 | |||
| 选择指南 | 小尺寸逻辑器件指南 (Rev. E) | 最新英语版本 (Rev.G) | 2012年 7月 16日 | |||
| 用户指南 | LOGIC Pocket Data Book (Rev. B) | 2007年 1月 16日 | ||||
| 更多文献资料 | Digital Bus Switch Selection Guide (Rev. A) | 2004年 11月 10日 | ||||
| 应用手册 | Semiconductor Packing Material Electrostatic Discharge (ESD) Protection | 2004年 7月 8日 | ||||
| 用户指南 | Signal Switch Data Book (Rev. A) | 2003年 11月 14日 | ||||
| 应用手册 | Bus FET Switch Solutions for Live Insertion Applications | 2003年 2月 7日 |
设计和开发
如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| SSOP (DL) | 48 | Ultra Librarian |
| TSSOP (DGG) | 48 | Ultra Librarian |
| TVSOP (DGV) | 48 | Ultra Librarian |
订购和质量
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
- 制造厂地点
- 封装厂地点