米6体育平台手机版_好二三四详情

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 33 BW at Acl (MHz) 150 Acl, min spec gain (V/V) 1 Slew rate (typ) (V/µs) 650 Architecture Bipolar, Fully Differential ADC Driver Vn at flatband (typ) (nV√Hz) 7.6 Iq per channel (typ) (mA) 17.5 Rail-to-rail No Vos (offset voltage at 25°C) (max) (mV) 7 Operating temperature range (°C) -40 to 85 Iout (typ) (mA) 85 2nd harmonic (dBc) 85 3rd harmonic (dBc) 88 Frequency of harmonic distortion measurement (MHz) 1 GBW (typ) (MHz) 150 Input bias current (max) (pA) 15000000 Features Shutdown CMRR (typ) (dB) 83 Rating Catalog
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 33 BW at Acl (MHz) 150 Acl, min spec gain (V/V) 1 Slew rate (typ) (V/µs) 650 Architecture Bipolar, Fully Differential ADC Driver Vn at flatband (typ) (nV√Hz) 7.6 Iq per channel (typ) (mA) 17.5 Rail-to-rail No Vos (offset voltage at 25°C) (max) (mV) 7 Operating temperature range (°C) -40 to 85 Iout (typ) (mA) 85 2nd harmonic (dBc) 85 3rd harmonic (dBc) 88 Frequency of harmonic distortion measurement (MHz) 1 GBW (typ) (MHz) 150 Input bias current (max) (pA) 15000000 Features Shutdown CMRR (typ) (dB) 83 Rating Catalog
HVSSOP (DGN) 8 14.7 mm² 3 x 4.9 SOIC (D) 8 29.4 mm² 4.9 x 6
  • High Performance
    • 150 MHz -3 dB Bandwidth (VCC = ±5 V)
    • 650 V/μs Slew Rate (VCC = ±15 V)
    • -89 dB Third Harmonic Distortion at 1 MHz
    • -83 dB Total Harmonic Distortion at 1 MHz
    • 7.6 nV/Hz Input-Referred Noise
  • Differential Input/Differential Output
    • Balanced Outputs Reject Common-Mode Noise
    • Differential Reduced Second Harmonic Distortion
  • Wide Power-Supply Range
    • VCC = 5 V Single-Supply to ±15 V Dual Supply
  • ICC(SD) = 1 mA (VCC = ±5) in Shutdown Mode (THS4150)
  • APPLICATIONS
    • Single-Ended to Differential Conversion
    • Differential ADC Driver
    • Differential Antialiasing
    • Differential Transmitter and Receiver
    • Output Level Shifter

PowerPAD is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.

  • High Performance
    • 150 MHz -3 dB Bandwidth (VCC = ±5 V)
    • 650 V/μs Slew Rate (VCC = ±15 V)
    • -89 dB Third Harmonic Distortion at 1 MHz
    • -83 dB Total Harmonic Distortion at 1 MHz
    • 7.6 nV/Hz Input-Referred Noise
  • Differential Input/Differential Output
    • Balanced Outputs Reject Common-Mode Noise
    • Differential Reduced Second Harmonic Distortion
  • Wide Power-Supply Range
    • VCC = 5 V Single-Supply to ±15 V Dual Supply
  • ICC(SD) = 1 mA (VCC = ±5) in Shutdown Mode (THS4150)
  • APPLICATIONS
    • Single-Ended to Differential Conversion
    • Differential ADC Driver
    • Differential Antialiasing
    • Differential Transmitter and Receiver
    • Output Level Shifter

PowerPAD is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.

The THS415x is one in a family of fully differential input/differential output devices fabricated using Texas Instruments' state-of-the-art BiComI complementary bipolar process.

The THS415x is made of a true fully-differential signal path from input to output. This design leads to an excellent common-mode noise rejection and improved total harmonic distortion.

The THS415x is one in a family of fully differential input/differential output devices fabricated using Texas Instruments' state-of-the-art BiComI complementary bipolar process.

The THS415x is made of a true fully-differential signal path from input to output. This design leads to an excellent common-mode noise rejection and improved total harmonic distortion.

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THS2630 正在供货 35V、180MHz 高速低噪声全差分放大器 Lower noise (1.1 nV/rtHz), lower offset (1.3 mV), lower power (8.9 mA), and wider supply (35 V)

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类型 标题 下载最新的英语版本 日期
* 数据表 High-Speed Differential I/O Amplifiers 数据表 (Rev. G) 2009年 3月 4日

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包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

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