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LMG3410EVM-031

LMG3410R150 600-V 150-mΩ GaN half-bridge daughter card

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LMG3410EVM-031

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Overview

LMG3410EVM-031 configures two LMG3410R150 GaN FETs in a half bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry.This EVM is designed to work in conjunction with larger systems.

Features
  • Input voltage operates up to 600 V
  • Simple open loop design to evaluate performance of LMG3410R150
  • Single PWM input on board for PWM signal with 50-ns dead time
  • Latched over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
Gallium nitride (GaN) power stages
LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection
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Evaluating LMG3410R150 GaN FET power stage

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Daughter card

LMG3410EVM-031 — LMG3410R150 600-V 150-mΩ GaN half-bridge daughter card

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Design files

download LMG3410EVM-031 Design File
SNOC046.ZIP (7139 KB)

Technical documentation

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Type Title Date
* EVM User's guide LMG3410R150-031 EVM User Guide 02 Apr 2019
Data sheet LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection datasheet (Rev. B) PDF | HTML 13 Feb 2020
Certificate LMG3410EVM-031 EU Declaration of Conformity (DoC) 23 Apr 2019

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