ISO5852SDWEVM-017
适用于 SiC 和 IGBT 电源模块的驾驶和保护评估板
ISO5852SDWEVM-017
概述
The ISO5852SDWEVM-017 is a compact, dual chanel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for half-bridge Sic MOSFET and IGBT Power Modules in standard 62-mm package. This TI EVM is based on 5.7-kVrms reinforced isolation driver IC ISO5852SDW in SOIC-16DW package with 8.0 mm creepage and clearance. The EVM includes SN6505B based isolated bias supplies and temperature and bus voltage isolated monitoring by amplifiers AMC1401.
特性
- 20-A peak, split output drive current with programmable drive voltages
- Two 5-kVrms reinforced isolated channels to support up to 1700 V input rail
- Short circuit protection with soft turn OFF and 2-A Miller clamp ability
- Robust noise-immune solution with CMTI > 100 V/ns
- Isolated module temperature and input rail monitoring
- Two, 2-W output bias supplies with UVLO and OVLO protection
- ISO5852SDWEVM-017 EVM board
- Power modules not included
隔离式栅极驱动器
立即订购并开发
评估板
ISO5852SDWEVM-017 — 适用于 SiC 和 IGBT 电源模块的驾驶和保护评估板
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设计工具
SLLR117 — ISO5852SDWEVM-017 Design Files
SLLR117 — ISO5852SDWEVM-017 Design Files
版本: 01.00.00.00
发布日期: 15 六月 2020
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隔离式栅极驱动器
硬件开发
评估板
发布信息
The design resource accessed as www.yogichopra.com/lit/zip/sllr117 or www.yogichopra.com/lit/xx/sllr117/sllr117.zip has been migrated to a new user experience at www.yogichopra.com/tool/cn/download/SLLR117. Please update any bookmarks accordingly.
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| 类型 | 标题 | 下载最新的英文版本 | 日期 | |||
|---|---|---|---|---|---|---|
| * | 用户指南 | ISO5852SDW Driving and Protecting SiC and IGBT Power Modules | 2018年 5月 24日 | |||
| 数据表 | ISO5852S 具有分离输出和有源保护特性的高 CMTI 2.5A 和 5A 增强型隔离式 IGBT、MOSFET 栅极驱动器 数据表 (Rev. C) | PDF | HTML | 英语版 (Rev.C) | PDF | HTML | 2023年 6月 15日 | |
| 证书 | ISO5852SDWEVM-017 EU Declaration of Conformity (DoC) | 2019年 1月 2日 |