米6体育平台手机版

ZHCSM61C November 2014 – September 2020 CC3200MOD

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

MOB|63

散热焊盘机械数据 (封装 | 引脚)

8.5.1 Current Consumption

T_A = 25 °C, V_BAT = 3.6 V

PARAMETER		TEST CONDITIONS⁽¹⁾⁽⁵⁾			TYP	UNIT
MCU ACTIVE	NWP ACTIVE	TX	1 DSSS	TX power level = 0	278	mA
			1 DSSS	TX power level = 4	194
			6 OFDM	TX power level = 0	254
			6 OFDM	TX power level = 4	185
			54 OFDM	TX power level = 0	229
			54 OFDM	TX power level = 4	166
		RX	1 DSSS		59
		RX	54 OFDM		59
	NWP idle connected⁽³⁾				15.3
MCU SLEEP	NWP ACTIVE	TX	1 DSSS	TX power level = 0	275	mA
			1 DSSS	TX power level = 4	191
			6 OFDM	TX power level = 0	251
			6 OFDM	TX power level = 4	182
			54 OFDM	TX power level = 0	226
			54 OFDM	TX power level = 4	163
		RX	1 DSSS		56
		RX	54 OFDM		56
	NWP idle connected⁽³⁾				12.2
MCU LPDS	NWP active	TX	1 DSSS	TX power level = 0	272	mA
			1 DSSS	TX power level = 4	188
			6 OFDM	TX power level = 0	248
			6 OFDM	TX power level = 4	179
			54 OFDM	TX power level = 0	223
			54 OFDM	TX power level = 4	160
		RX	1 DSSS		53
		RX	54 OFDM		53
	NWP LPDS⁽²⁾				0.275
	NWP idle connected⁽³⁾				0.875
MCU hibernate	NWP hibernate				7	µA
Peak calibration current ⁽⁴⁾		V_BAT = 3.3 V			450	mA
Peak calibration current ⁽⁴⁾		V_BAT = 2.3 V			620	mA

(1) TX power level = 0 implies maximum power (see Figure 8-1 through Figure 8-3). TX power level = 4 implies output power backed off approximately 4 dB.

(2) The LPDS number reported is with retention of 64KB MCU SRAM. The CC3200 device can be configured to retain 0KB, 64KB, 128KB, 192KB or 256KB SRAM in LPDS. Each 64KB retained increases LPDS current by 4 µA.

(3) DTIM = 1

(4) The complete calibration can take up to 17 mJ of energy from the battery over a time of 24 ms. Calibration is performed sparingly, typically when coming out of Hibernate and only if temperature has changed by more than 20°C or the time elapsed from prior calibration is greater than 24 hours.

(5) The CC3200 system is a constant power-source system. The active current numbers scale based on the V_BAT voltage supplied.

Note: The area enclosed in the circle represents a significant reduction in current when transitioning from TX power level 3 to 4. In the case of lower range requirements (13-dBm output power), TI recommends using TX power level 4 to reduce the current.

Figure 8-1 TX Power and IBAT vs TX Power Level Settings (1 DSSS)

Figure 8-2 TX Power and IBAT vs TX Power Level Settings (6 OFDM)

Figure 8-3 TX Power and IBAT vs TX Power Level Settings (54 OFDM)