SCAS892C February   2010  – December 2016 CDCE937-Q1 , CDCEL937-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. 9 Parameter Measurement Information
  10. 10Detailed Description
    1. 10.1 Overview
    2. 10.2 Functional Block Diagram
    3. 10.3 Feature Description
      1. 10.3.1 Control Terminal Setting
      2. 10.3.2 Default Device Setting
    4. 10.4 Device Functional Modes
      1. 10.4.1 SDA and SCL Serial Interface
    5. 10.5 Programming
      1. 10.5.1 Data Protocol
      2. 10.5.2 Command Code Definition
      3. 10.5.3 Generic Programming Sequence
      4. 10.5.4 Byte Write Programming Sequence
      5. 10.5.5 Byte Read Programming Sequence
      6. 10.5.6 Block Write Programming Sequence
      7. 10.5.7 Block Read Programming Sequence
      8. 10.5.8 Timing Diagram for the SDA and SCL Serial Control Interface
      9. 10.5.9 SDA and SCL Hardware Interface
    6. 10.6 Register Maps
      1. 10.6.1 SDA and SCL Configuration Registers
  11. 11Application and Implementation
    1. 11.1 Application Information
    2. 11.2 Typical Application
      1. 11.2.1 Design Requirements
      2. 11.2.2 Detailed Design Procedure
        1. 11.2.2.1 Spread-Spectrum Clock (SSC)
        2. 11.2.2.2 PLL Multiplier or Divider Definition
        3. 11.2.2.3 Crystal Oscillator Start-Up
        4. 11.2.2.4 Frequency Adjustment With Crystal Oscillator Pulling
        5. 11.2.2.5 Unused Inputs and Outputs
        6. 11.2.2.6 Switching Between XO and VCXO Mode
      3. 11.2.3 Application Curves
  12. 12Power Supply Recommendations
  13. 13Layout
    1. 13.1 Layout Guidelines
    2. 13.2 Layout Example
  14. 14Device and Documentation Support
    1. 14.1 Documentation Support
      1. 14.1.1 Related Documentation
    2. 14.2 Related Links
    3. 14.3 Receiving Notification of Documentation Updates
    4. 14.4 Community Resources
    5. 14.5 Trademarks
    6. 14.6 Electrostatic Discharge Caution
    7. 14.7 Glossary
  15. 15Mechanical, Packaging, and Orderable Information

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8 Specifications

8.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage, VDD –0.5 2.5 V
Input voltage, VI(2)(3) –0.5 VDD + 0.5 V
Output voltage, VO(2) –0.5 Vddout + 0.5 V
Input current, II (VI < 0 and VI > VDD) 20 mA
Continuous output current, IO 50 mA
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input and output negative voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(3) SDA and SCL can go up to 3.6 V as stated in the Recommended Operating Conditions.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM),
per AEC Q100-011		 All pins ±500
Corner pins ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

8.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VDD Device supply voltage 1.7 1.8 1.9 V
VO Output Yx supply voltage, Vddout CDCE937-Q1 2.3 3.6 V
CDCEL937-Q1 1.7 1.9
VIL Low-level input voltage LVCMOS 0.3 × VDD V
VIH High-level input voltage LVCMOS 0.7 × VDD V
VI(thresh) Input voltage threshold LVCMOS 0.5 × VDD V
VIS Input voltage S0 0 1.9 V
S1, S2, SDA, SCL; VI(thresh) = 0.5 VDD 0 3.6
VI(CLK) Input voltage range CLK 0 1.9 V
IOH /IOL Output current Vddout = 3.3 V ±12 mA
Vddout = 2.5 V ±10
Vddout = 1.8 V ±8
CL Output load LVCMOS 10 pF
TA Ambient temperature –40 125 °C
CRYSTAL/VCXO(1)
fXtal Crystal input frequency (fundamental mode) 8 27 32 MHz
ESR Effective series resistance 100 Ω
fPR Pulling range (0 V ≤ Vctrl ≤ 1.8 V)(2) ±120 ±150 ppm
Vctrl Frequency control voltage 0 VDD V
C0/C1 Pullability ratio 220
CL On-chip load capacitance at Xin and Xout 0 20 pF
(1) For more information about VCXO configuration and crystal recommendation, see VCXO Application Guideline for CDCE(L)9xx Family (SCAA085).
(2) Pulling range depends on crystal-type, on-chip crystal load capacitance and PCB stray capacitance; pulling range of min ± 120 ppm applies for crystal listed in VCXO Application Guideline for CDCE(L)9xx Family (SCAA085).

8.4 Thermal Information

over operating free-air temperature range (unless otherwise noted)(1)
THERMAL METRIC(2) CDCE937-Q1, CDCEL937-Q1 UNIT
PW (TSSOP)
20 PINS
RθJA Junction-to-ambient thermal resistance Airflow = 0 lfm 89 °C/W
Airflow = 150 lfm 75
Airflow = 200 lfm 74
Airflow = 250 lfm 74
Airflow = 500 lfm 69
RθJC(top) Junction-to-case (top) thermal resistance 31 °C/W
RθJB Junction-to-board thermal resistance 55 °C/W
ψJT Junction-to-top characterization parameter 0.8 °C/W
ψJB Junction-to-board characterization parameter 49 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W
(1) The package thermal impedance is calculated in accordance with JESD 51 and JEDEC2S2P (high-k board).
(2) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

8.5 Electrical Characteristics

over recommended operating ambient temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
IDD Supply current (see Figure 1) All outputs off, f(CLK) = 27 MHz,
f(VCO) = 135 MHz		 All PLLS on 29 mA
Per PLL 9
IDDOUT Output supply current (see Figure 2) No load, all outputs on,
fOUT = 27 MHz		 CDCE937,
VDDOUT = 3.3 V		 3.1 mA
CDCEL937,
VDDOUT = 1.8 V		 1.5
IDD(PD) Power-down current Every circuit powered down except SDA and SCL,
fIN = 0 MHz, VDD = 1.9 V		 50 µA
V(PUC) Supply voltage Vdd threshold for power-up control circuit 0.85 1.45 V
f(VCO) VCO frequency range of PLL 80 230 MHz
fOUT LVCMOS output frequency Vddout = 3.3 V 230 MHz
Vddout = 1.8 V 230
LVCMOS PARAMETER
VIK LVCMOS input voltage VDD = 1.7 V, II = –18 mA –1.2 V
II LVCMOS input current VI = 0 V or VDD, VDD = 1.9 V ±5 µA
IIH LVCMOS input current for S0/S1/S2 VI = VDD, VDD = 1.9 V 5 µA
IIL LVCMOS input current for S0/S1/S2 VI = 0 V, VDD = 1.9 V –6 µA
CI Input capacitance at Xin/Clk VI(Clk) = 0 V or VDD 6 pF
Input capacitance at Xout VI(Xout) = 0 V or VDD 2
Input capacitance at S0/S1/S2 VIS = 0 V or VDD 3
LVCMOS PARAMETER, Vddout = 3.3 V (CDCE937)
VOH LVCMOS high-level output voltage Vddout = 3 V, IOH = –0.1 mA 2.9 V
Vddout = 3 V, IOH = –8 mA 2.4
Vddout = 3 V, IOH = –12 mA 2.2
VOL LVCMOS low-level output voltage Vddout = 3 V, IOL = 0.1 mA 0.1 V
Vddout = 3 V, IOL = 8 mA 0.5
Vddout = 3 V, IOL = 12 mA 0.8
tPLH, tPHL Propagation delay All PLL bypass 3.2 ns
tr/tf Rise and fall time Vddout= 3.3 V (20%–80%) 0.6 ns
tjit(cc) Cycle-to-cycle jitter(2)(3) 1 PLL switching, Y2-to-Y3 60 90 ps
3 PLL switching, Y2-to-Y7 100 150
tjit(per) Peak-to-peak period jitter(3) 1 PLL switching, Y2-to-Y3 70 100 ps
3 PLL switching, Y2-to-Y7 120 180
tsk(o) Output skew (see Table 2)(4) fOUT = 50 MHz, Y1-to-Y3 60 ps
fOUT = 50 MHz, Y2-to-Y5 160
odc Output duty cycle(5) fVCO = 100 MHz, Pdiv = 1 45% 55%
LVCMOS PARAMETER, Vddout = 2.5 V (CDCE937)
VOH LVCMOS high-level output voltage Vddout = 2.3 V, IOH = –0.1 mA 2.2 V
Vddout = 2.3 V, IOH = –6 mA 1.7
Vddout = 2.3 V, IOH = –10 mA 1.6
VOL LVCMOS low-level output voltage Vddout = 2.3 V, IOL = 0.1 mA 0.1 V
Vddout = 2.3 V, IOL = 6 mA 0.5
Vddout = 2.3 V, IOL = 10 mA 0.7
tPLH, tPHL Propagation delay All PLL bypass 3.4 ns
tr/tf Rise and fall time Vddout = 2.5 V (20%–80%) 0.8 ns
tjit(cc) Cycle-to-cycle jitter(2) (3) 1 PLL switching, Y2-to-Y3 60 90 ps
3 PLL switching, Y2-to-Y7 100 150
tjit(per) Peak-to-peak period jitter(4) 1 PLL switching, Y2-to-Y3 70 100 ps
3 PLL switching, Y2-to-Y7 120 180
tsk(o) Output skew (see Table 2)(4) fOUT = 50 MHz, Y1-to-Y3 60 ps
fOUT = 50 MHz, Y2-to-Y5 160
odc Output duty cycle(5) f(VCO) = 100 MHz, Pdiv = 1 45% 55%
LVCMOS PARAMETER, Vddout = 1.8 V (CDCEL937)
VOH LVCMOS high-level output voltage Vddout = 1.7 V, IOH = –0.1 mA 1.6 V
Vddout = 1.7 V, IOH = –4 mA 1.4
Vddout = 1.7 V, IOH = –8 mA 1.1
VOL LVCMOS low-level output voltage Vddout = 1.7 V, IOL = 0.1 mA 0.1 V
Vddout = 1.7 V, IOL = 4 mA 0.3
Vddout = 1.7 V, IOL = 8 mA 0.6
tPLH, tPHL Propagation delay All PLL bypass 2.6 ns
tr/tf Rise and fall time Vddout= 1.8 V (20%–80%) 0.7 ns
tjit(cc) Cycle-to-cycle jitter(2) (3) 1 PLL switching, Y2-to-Y3 70 120 ps
3 PLL switching, Y2-to-Y7 100 150
tjit(per) Peak-to-peak period jitter(3) 1 PLL switching, Y2-to-Y3 90 140 ps
3 PLL switching, Y2-to-Y7 120 190
tsk(o) Output skew (see Table 2)(4) fOUT = 50 MHz, Y1-to-Y3 60 ps
fOUT = 50 MHz, Y2-to-Y5 160
odc Output duty cycle(5) f(VCO) = 100 MHz, Pdiv = 1 45% 55%
SDA and SCL PARAMETER
VIK SCL and SDA input clamp voltage VDD = 1.7 V, II = –18 mA –1.2 V
IIH SCL and SDA input current VI = VDD, VDD = 1.9 V ±10 µA
VIH SDA and SCL input high voltage(6) 0.7 × VDD V
VIL SDA and SCL input low voltage(6) 0.3 × VDD V
VOL SDA low-level output voltage IOL = 3 mA, VDD = 1.7 V 0.2 × VDD V
CI SCL/SDA Input capacitance VI = 0 V or VDD 3 10 pF
EEPROM
EEcyc Programming cycles of EEPROM 1000 cycles
EEret Data retention 10 years
(1) All typical values are at respective nominal VDD.
(2) 10000 cycles.
(3) Jitter depends on configuration. Data is taken under the following conditions: 1-PLL : fIN = 27MHz, Y2/3 = 27 MHz, (measured at Y2), 3-PLL: fIN = 27 MHz, Y2/3 = 27 MHz (measured at Y2), Y4/5 = 16.384 MHz, Y6/7 = 74.25 MHz
(4) The tsk(o) specification is only valid for equal loading of each bank of outputs, and outputs are generated from the same divider; data taking on rising edge (tr).
(5) odc depends on output rise and fall time (tr / tf).
(6) SDA and SCL pins are 3.3 V tolerant.

8.6 Timing Requirements

over recommended ranges of supply voltage, load, and operating ambient temperature (see Figure 12)
MIN NOM MAX UNIT
CLK_IN
fCLK LVCMOS clock input frequency PLL bypass mode 0 160 MHz
PLL mode 8 160
tr / tf Rise and fall time CLK signal (20% to 80%) 3 ns
dutyCLK Duty cycle CLK at VDD/2 40% 60%
SDA and SCL
fSCL SCL clock frequency Standard mode 0 100 kHz
Fast mode 0 400
tsu(START) START setup time (SCL high before SDA low) Standard mode 4.7 µs
Fast mode 0.6
th(START) START hold time (SCL low after SDA low) Standard mode 4 µs
Fast mode 0.6
tw(SCLL) SCL low-pulse duration Standard mode 4.7 µs
Fast mode 1.3
tw(SCLH) SCL high-pulse duration Standard mode 4 µs
Fast mode 0.6
th(SDA) SDA hold time (SDA valid after SCL low) Standard mode 0 3.45 µs
Fast mode 0 0.9
tsu(SDA) SDA setup time Standard mode 250 ns
Fast mode 100
tr SCL/SDA input rise time Standard mode 1000 ns
Fast mode 300
tf SCL/SDA input fall time, standard mode and fast mode 300 ns
tsu(STOP) STOP setup time Standard mode 4 µs
Fast mode 0.6
tBUS Bus free time between a STOP and START condition Standard mode 4.7 µs
Fast mode 1.3

8.7 Typical Characteristics

CDCE937-Q1 CDCEL937-Q1 idd_v_pll_las564.gif Figure 1. CDCEx937-Q1 Supply Current
vs PLL Frequency
CDCE937-Q1 CDCEL937-Q1 idd_18v_of_las564des.gif Figure 3. CDCEL937-Q1 Output Current vs Output Frequency
CDCE937-Q1 CDCEL937-Q1 idd_33v_of_las564.gif Figure 2. CDCE937-Q1 Output Current
vs Output Frequency
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