4 Revision History
Changes from Revision B (December 2017) to Revision C (February 2022)
- 将超薄型封装要点中的厚度从 0.35mm 更改为 0.36mmGo
- 将超薄型封装图片中的厚度从 0.35mm 更新为 0.36mmGo
- Changed ultra-low profile image height from 0.35 mm to 0.36
mm.Go
- Added FemtoFET Surface Mount Guide note.Go
Changes from Revision A (January 2016) to Revision B (December 2017)
- 将 IDM 值从27A 更改为18.5A（位于绝对最大额定值 表中）Go
- Updated Figure 5-1. Go
- Updated Figure 5-10 using Typ RθJA = 250°C/W. Go
- Updated all mechanical drawings, increased the size of the pads in the
Section 7.3
section. Go