4 Revision History
Changes from Revision A (May 2017) to Revision B (February 2022)
- 将超薄型封装要点中的厚度从 0.35mm 更改为 0.36mmGo
- 将超薄型封装图片中的厚度从 0.35mm 更新为 0.36mm。Go
- Changed ultra-low profile image height from 0.35 mm to 0.36
mm.Go
- Added FemtoFET Surface Mount Guide note.Go
Changes from Revision * (October 2016) to Revision A (May 2017)
- Changed IDSS andIGSS unit value from µA to nA in the Electrical Characteristics table. Go