CSD17382F4 30V N 沟道 FemtoFET MOSFET

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1 特性

该 30V、54mΩ N 沟道 FemtoFET™ MOSFET 技术经过设计和优化，能最大限度地减小在许多手持式和移动应用中的空间占用。这项技术能够在替代标准小信号 MOSFET 的同时将封装尺寸减小至少 60%。

典型器件尺寸

米6体育平台手机版_好二三四概要

器件信息

器件⁽¹⁾	数量	介质	封装	配送
CSD17382F4	3000	7 英寸卷带	Femto (0402) 1.0mm × 0.6mm 无引线 SMD	卷带包装
CSD17382F4T	250	7 英寸卷带	Femto (0402) 1.0mm × 0.6mm 无引线 SMD	卷带包装

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购米6体育平台手机版_好二三四附录。

绝对最大额定值

(1) 典型 R_θJA = 245°C/W（在 0.06 英寸 (1.52mm) 厚的 FR4 PCB 上安装 1 平方英寸 (6.45cm²)、2oz、
0.071mm 厚的铜焊盘时）。

(2) 脉冲持续时间 ≤ 100μs，占空比 ≤ 1%.

顶视图

Changes from Revision B (October 2021) to Revision C (February 2022)

Changes from Revision A (December 2016) to Revision B (October 2021)

Changes from Revision * (April 2016) to Revision A (December 2016)

Changed the TEST CONDITIONS for g_fsTransconductance From: V_DS = 15 V To: V_DS = 3 V in the Section 5.1 section. Go
Added Section 6.2 in the Section 6 section. Go
Updated all mechanical drawings. Go

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_DS = 250 μA	30			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 24 V			1	µA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 10 V			5	µA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = 250 μA	0.7	0.9	1.2	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 1.8 V, I_DS =0.5 A		110	180	mΩ
		V_GS = 2.5 V, I_DS =0.5 A		67	82	mΩ
		V_GS = 4.5 V, I_DS = 0.5 A		56	67	mΩ
		V_GS = 8.0 V, I_DS = 0.5 A		54	64	mΩ
g_fs	Transconductance	V_DS = 3 V, I_DS = 0.5 A		5.9		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 15 V, ƒ = 1 MHz		267	347	pF
C_oss	Output capacitance			31.0	40.3	pF
C_rss	Reverse transfer capacitance			15.0	19.5	pF
R_G	Series gate resistance			220		Ω
Q_g	Gate charge total (4.5 V)	V_DS = 15 V, I_DS = 0.5 A		2.1	2.7	nC
Q_gd	Gate charge gate-to-drain			0.63		nC
Q_gs	Gate charge gate-to-source			0.41		nC
Q_g(th)	Gate charge at V_th			0.12		nC
Q_oss	Output charge	V_DS = 15 V, V_GS = 0 V		1.53		nC
t_d(on)	Turn on delay time	V_DS = 15 V, V_GS = 4.5 V, I_DS = 0.5 A, R_G = 0 Ω		59		ns
t_r	Rise time			111		ns
t_d(off)	Turn off delay time			279		ns
t_f	Fall time			270		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 0.5 A, V_GS = 0 V		0.7	1.0	V

T_A = 25°C (unless otherwise stated)

THERMAL METRIC		TYPICAL VALUES			UNIT
R_θJA	Junction-to-ambient thermal resistance⁽¹⁾		85		°C/W
R_θJA	Junction-to-ambient thermal resistance⁽²⁾		245		°C/W

(1) Device mounted on FR4 material with 1-in² (6.45-cm²), 2-oz. (0.071-mm) thick Cu.

(2) Device mounted on FR4 material with minimum Cu mounting area.