4 修订历史记录

Changes from D Revision (August 2014) to E Revision

• 脉冲电流增加至 275AGo
• Updated the SOA in Figure 10Go

Changes from C Revision (May 2013) to D Revision

• 在订购信息表中添加了 7 英寸卷带Go
• 添加了外壳温度保持在 25°C 时的功耗参数 Go
• 更新了脉冲电流条件 Go
• Updated Figure 1 to a normalized R_θJC curveGo

Changes from B Revision (November 2012) to C Revision

• 更新了此图表以包含 E3、e1 和 e2 尺寸 Go
• 添加了模板布局 Go

Changes from A Revision (October 2012) to B Revision

• 更改了 R_DS(on) 与 V_GS 的关系曲线图以及栅极充电曲线图 Go
• Changed R_θJA Max value From: 51 To: 50°C/WGo
• Changed the Typical MOSFET Characteristics sectionGo

Changes from * Revision (June 2012) to A Revision

• Changed the Transconductance TYP value From: 63 S To: 71 SGo
• Changed the Turn On and Turn Off Delay Time, Rise and Fall Time Test Conditions From: I_DS = 17 A, R_G = 2 Ω To: I_DS = 17 A, R_G = 0 ΩGo
• Changed the Q_rr Reverse Recovery Charge TYP value From: 18 nC To: 39 nCGo