CSD18541F5 60V N 沟道 FemtoFET™ MOSFET

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1 特性

该 54mΩ、60V N 沟道 FemtoFET™ MOSFET 技术经过设计和优化，能够最大限度地减小在空间受限的工业负载开关应用中占用的空间。这项技术能够在替代标准小信号 MOSFET 的同时大幅减小封装尺寸。

典型器件尺寸

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器件信息

器件	数量	介质	封装	配送
CSD18541F5	3000	7 英寸卷带	Femto 1.53mm × 0.77mm 无引线 SMD	卷带包装
CSD18541F5T	250	7 英寸卷带	Femto 1.53mm × 0.77mm 无引线 SMD	卷带包装

绝对最大额定值

顶视图

Changes from Revision A (December 2016) to Revision B (February 2022)

Changes from Revision * (May 2016) to Revision A (August 2017)

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_DS = 250 μA	60			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 48 V			1	µA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			10	µA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = 250 μA	1.4	1.75	2.2	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 4.5 V, I_DS = 1 A		57	75	mΩ
R_DS(on)	Drain-to-source on-resistance	V_GS = 10 V, I_DS = 1 A		54	65	mΩ
g_fs	Transconductance	V_DS = 6 V, I_DS = 1 A		7.7		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 30 V, ƒ = 1 MHz		598	777	pF
C_oss	Output capacitance			47	61	pF
C_rss	Reverse transfer capacitance			8.1	10.5	pF
R_G	Series gate resistance			1200	1600	Ω
Q_g	Gate charge total (10 V)	V_DS = 30 V, I_DS = 1 A		11	14	nC
Q_gd	Gate charge gate-to-drain			1.6		nC
Q_gs	Gate charge gate-to-source			1.5		nC
Q_g(th)	Gate charge at V_th			0.8		nC
Q_oss	Output charge	V_DS = 30 V, V_GS = 0 V		3.2		nC
t_d(on)	Turnon delay time	V_DS = 30 V, V_GS = 4.5 V, I_DS = 1 A, R_G = 0 Ω		572		ns
t_r	Rise time			540		ns
t_d(off)	Turnoff delay time			1076		ns
t_f	Fall time			496		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 1 A, V_GS = 0 V		0.8	1	V