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ZHCSEM4 February 2016 CSD95472Q5MC

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

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6 Specifications

6.1 Absolute Maximum Ratings

T_A = 25°C (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
	V_IN to P_GND	–0.3	20	V
	V_IN to V_SW	–0.3	20	V
	V_IN to V_SW (10 ns)		23	V
	V_SW to P_GND	–0.3	20	V
	V_SW to P_GND (10 ns)	–7	23	V
	V_DD to P_GND	–0.3	7	V
	ENABLE, PWM, FCCM, TAO, IOUT, REFIN to P_GND⁽²⁾	–0.3	V_DD + 0.3 V	V
	BOOT to BOOT_R⁽²⁾	–0.3	V_DD + 0.3 V	V
P_D	Power dissipation		12	W
T_J	Operating junction	–55	150	°C
T_stg	Storage temperature	–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Should not exceed 7 V.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM)	±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM)	±500	V

6.3 Recommended Operating Conditions

T_A = 25° (unless otherwise noted)

			MIN	MAX	UNIT
V_DD	Gate drive voltage		4.5	5.5	V
V_IN	Input supply voltage⁽¹⁾			16	V
V_OUT	Output voltage			5.5	V
I_OUT	Continuous output current	V_IN = 12 V, V_DD = 5 V, V_OUT = 1.2 V, ƒ_SW = 500 kHz, L_OUT = 0.225 µH⁽²⁾		60	A
I_OUT-PK	Peak output current⁽³⁾			90	A
ƒ_SW	Switching frequency	C_BST = 0.1 µF (min)		1250	kHz
	On time duty cycle	ƒ_SW = 1 MHz		85%
	Minimum PWM on time		40		ns
	Operating temperature		–40	125	°C

(1) Operating at high V_IN can create excessive AC voltage overshoots on the switch node (V_SW) during MOSFET switching transients. For reliable operation, the switch node (V_SW) to ground voltage must remain at or below the Absolute Maximum Ratings.

(2) Measurement made with six 10 µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across V_IN to P_GND pins.

(3) System conditions as defined in Note 1. Peak Output Current is applied for t_p = 50 µs.

6.4 Thermal Information

T_A = 25°C (unless otherwise noted)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC(top)	Junction-to-case (top of package) thermal resistance ⁽¹⁾			5	°C/W
R_θJB	Junction-to-board thermal resistance⁽²⁾			1.5	°C/W

(1) R_θJC(top) is determined with the device mounted on a 1 inch² (6.45 cm²), 2-oz (0.071 mm thick) Cu pad on a 1.5 inches x 1.5 inches, 0.06-inch (1.52-mm) thick FR4 board.

(2) R_θJB value based on hottest board temperature within 1 mm of the package.