SLVSH22 May   2024 DRV8000-Q1

ADVANCE INFORMATION  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings Auto
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information RGZ package
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 External Components
    4. 7.4 Feature Description
      1. 7.4.1 Heater MOSFET Driver
        1. 7.4.1.1 Heater MOSFET Driver Control
        2. 7.4.1.2 Heater MOSFET Driver Protection
          1. 7.4.1.2.1 Heater SH_HS Internal Diode
          2. 7.4.1.2.2 Heater MOSFET VDS Overcurrent Protection (HEAT_VDS)
          3. 7.4.1.2.3 Heater MOSFET Open Load Detection
      2. 7.4.2 High-side Drivers
        1. 7.4.2.1 High-side Driver Control
          1. 7.4.2.1.1 High-side Driver PWM Generator
          2. 7.4.2.1.2 Constant Current Mode
          3. 7.4.2.1.3 OUT7 HS ITRIP Behavior
          4. 7.4.2.1.4 High-side Drivers - Parallel Outputs
        2. 7.4.2.2 High-side Driver Protection Circuits
          1. 7.4.2.2.1 High-side Drivers Internal Diode
          2. 7.4.2.2.2 High-side Driver Over Current Protection
          3. 7.4.2.2.3 High-side Driver Open Load Detection
      3. 7.4.3 Electro-chromic Glass Driver
        1. 7.4.3.1 Electro-chromic Driver Control
        2. 7.4.3.2 Electro-chromic Driver Protection
      4. 7.4.4 Half-bridge Drivers
        1. 7.4.4.1 Half-bridge Control
        2. 7.4.4.2 Half-bridge ITRIP Regulation
        3. 7.4.4.3 Half-bridge Protection and Diagnostics
          1. 7.4.4.3.1 Half-bridge Off-State Diagnostics (OLP)
          2. 7.4.4.3.2 Half-Bridge Active Open Load Detection (OLA)
          3. 7.4.4.3.3 Half-Bridge Over-Current Protection
      5. 7.4.5 Gate Drivers
        1. 7.4.5.1 Input PWM Modes
          1. 7.4.5.1.1 Half-Bridge Control
          2. 7.4.5.1.2 H-Bridge Control
          3. 7.4.5.1.3 DRVOFF - Gate Driver Shutoff Pin
        2. 7.4.5.2 Smart Gate Driver - Functional Block Diagram
          1. 7.4.5.2.1  Smart Gate Driver
          2. 7.4.5.2.2  Functional Block Diagram
          3. 7.4.5.2.3  Slew Rate Control (IDRIVE)
          4. 7.4.5.2.4  Gate Driver State Machine (TDRIVE)
            1. 7.4.5.2.4.1 tDRIVE Calculation Example
          5. 7.4.5.2.5  Propagation Delay Reduction (PDR)
          6. 7.4.5.2.6  PDR Pre-Charge/Pre-Discharge Control Loop Operation Details
            1. 7.4.5.2.6.1 PDR Pre-Charge/Pre-Discharge Setup
          7. 7.4.5.2.7  PDR Post-Charge/Post-Discharge Control Loop Operation Details
            1. 7.4.5.2.7.1 PDR Post-Charge/Post-Discharge Setup
          8. 7.4.5.2.8  Detecting Drive and Freewheel MOSFET
          9. 7.4.5.2.9  Automatic Duty Cycle Compensation (DCC)
          10. 7.4.5.2.10 Closed Loop Slew Time Control (STC)
            1. 7.4.5.2.10.1 STC Control Loop Setup
        3. 7.4.5.3 Tripler (Double-Stage) Charge Pump
        4. 7.4.5.4 Wide Common Mode Differential Current Shunt Amplifier
        5. 7.4.5.5 Gate Driver Protection Circuits
          1. 7.4.5.5.1 MOSFET VDS Overcurrent Protection (VDS_OCP)
          2. 7.4.5.5.2 Gate Driver Fault (VGS_GDF)
          3. 7.4.5.5.3 Offline Short Circuit and Open Load Detection (OOL and OSC)
      6. 7.4.6 Sense Output (IPROPI)
      7. 7.4.7 Protection Circuits
        1. 7.4.7.1 Fault Reset (CLR_FLT)
        2. 7.4.7.2 DVDD Logic Supply Power on Reset (DVDD_POR)
        3. 7.4.7.3 PVDD Supply Undervoltage Monitor (PVDD_UV)
        4. 7.4.7.4 PVDD Supply Overvoltage Monitor (PVDD_OV)
        5. 7.4.7.5 VCP Charge Pump Undervoltage Lockout (VCP_UV)
        6. 7.4.7.6 Thermal Clusters
        7. 7.4.7.7 Watchdog Timer
        8. 7.4.7.8 Fault Detection and Response Summary Table
    5. 7.5 Programming
      1. 7.5.1 SPI Interface
      2. 7.5.2 SPI Format
      3. 7.5.3 Timing Diagrams
  9. DRV8000-Q1 Register Map
  10. DRV8000-Q1_STATUS Registers
  11. 10DRV8000-Q1_CNFG Registers
  12. 11DRV8000-Q1_CTRL Registers
  13. 12Application and Implementation
    1. 12.1 Application Information
    2. 12.2 Typical Application
      1. 12.2.1 Design Requirements
    3. 12.3 Initialization Setup
    4. 12.4 Power Supply Recommendations
      1. 12.4.1 Bulk Capacitance Sizing
    5. 12.5 Layout
      1. 12.5.1 Layout Guidelines
      2. 12.5.2 Layout Example
  14. 13Device and Documentation Support
    1. 13.1 Receiving Notification of Documentation Updates
    2. 13.2 Support Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  15. 14Revision History
  16. 15Mechanical, Packaging, and Orderable Information
    1. 15.1 Package Option Addendum
    2. 15.2 Tape and Reel Information

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订购信息
MOSFET VDS Overcurrent Protection (VDS_OCP)

If the voltage across the VDS overcurrent comparator exceeds the VDS_LVL for longer than the tDS_DG time, a VDS overcurrent condition is detected. The voltage threshold and deglitch time can be adjusted through the or and VDS_DG register settings.

The VDS overcurrent monitor can respond and recover in four different modes set through the VDS_MODE register setting.

  • Latched Fault Mode: After detecting the overcurrent event, the gate driver pull downs are enabled and FAULT register bit, and associated VDS register bit are asserted. After the overcurrent event is removed, the fault state remains latched until CLR_FLT is issued.
  • Cycle by Cycle Mode: After detecting the overcurrent event, the gate driver pull downs are enabled and FAULT register bit, and associated VDS_XX register bit are asserted. The next PWM input will clear the FAULT register bit and reenable the driver automatically. The associated VDS_XX register bit will remain asserted until CLR_FLT is issued.
  • Warning Report Only Mode: The overcurrent event is reported in the WARN and associated VDS_XX register bits. The device will not take any action. The warning remains latched until CLR_FLT is issued.
  • Disabled Mode: The VDS overcurrent monitors are disabled and will not respond or report.

When a VDS overcurrent fault occurs, the gate pull down current can be configured in order to increase or decrease the time to disable the external MOSFET. This can help to avoid a slow-turn off during high-current short circuit conditions. This setting is configure through the VDS_IDRVN register setting.