SLVSH22 May   2024 DRV8000-Q1

ADVANCE INFORMATION  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings Auto
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information RGZ package
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 External Components
    4. 7.4 Feature Description
      1. 7.4.1 Heater MOSFET Driver
        1. 7.4.1.1 Heater MOSFET Driver Control
        2. 7.4.1.2 Heater MOSFET Driver Protection
          1. 7.4.1.2.1 Heater SH_HS Internal Diode
          2. 7.4.1.2.2 Heater MOSFET VDS Overcurrent Protection (HEAT_VDS)
          3. 7.4.1.2.3 Heater MOSFET Open Load Detection
      2. 7.4.2 High-side Drivers
        1. 7.4.2.1 High-side Driver Control
          1. 7.4.2.1.1 High-side Driver PWM Generator
          2. 7.4.2.1.2 Constant Current Mode
          3. 7.4.2.1.3 OUT7 HS ITRIP Behavior
          4. 7.4.2.1.4 High-side Drivers - Parallel Outputs
        2. 7.4.2.2 High-side Driver Protection Circuits
          1. 7.4.2.2.1 High-side Drivers Internal Diode
          2. 7.4.2.2.2 High-side Driver Over Current Protection
          3. 7.4.2.2.3 High-side Driver Open Load Detection
      3. 7.4.3 Electro-chromic Glass Driver
        1. 7.4.3.1 Electro-chromic Driver Control
        2. 7.4.3.2 Electro-chromic Driver Protection
      4. 7.4.4 Half-bridge Drivers
        1. 7.4.4.1 Half-bridge Control
        2. 7.4.4.2 Half-bridge ITRIP Regulation
        3. 7.4.4.3 Half-bridge Protection and Diagnostics
          1. 7.4.4.3.1 Half-bridge Off-State Diagnostics (OLP)
          2. 7.4.4.3.2 Half-Bridge Active Open Load Detection (OLA)
          3. 7.4.4.3.3 Half-Bridge Over-Current Protection
      5. 7.4.5 Gate Drivers
        1. 7.4.5.1 Input PWM Modes
          1. 7.4.5.1.1 Half-Bridge Control
          2. 7.4.5.1.2 H-Bridge Control
          3. 7.4.5.1.3 DRVOFF - Gate Driver Shutoff Pin
        2. 7.4.5.2 Smart Gate Driver - Functional Block Diagram
          1. 7.4.5.2.1  Smart Gate Driver
          2. 7.4.5.2.2  Functional Block Diagram
          3. 7.4.5.2.3  Slew Rate Control (IDRIVE)
          4. 7.4.5.2.4  Gate Driver State Machine (TDRIVE)
            1. 7.4.5.2.4.1 tDRIVE Calculation Example
          5. 7.4.5.2.5  Propagation Delay Reduction (PDR)
          6. 7.4.5.2.6  PDR Pre-Charge/Pre-Discharge Control Loop Operation Details
            1. 7.4.5.2.6.1 PDR Pre-Charge/Pre-Discharge Setup
          7. 7.4.5.2.7  PDR Post-Charge/Post-Discharge Control Loop Operation Details
            1. 7.4.5.2.7.1 PDR Post-Charge/Post-Discharge Setup
          8. 7.4.5.2.8  Detecting Drive and Freewheel MOSFET
          9. 7.4.5.2.9  Automatic Duty Cycle Compensation (DCC)
          10. 7.4.5.2.10 Closed Loop Slew Time Control (STC)
            1. 7.4.5.2.10.1 STC Control Loop Setup
        3. 7.4.5.3 Tripler (Double-Stage) Charge Pump
        4. 7.4.5.4 Wide Common Mode Differential Current Shunt Amplifier
        5. 7.4.5.5 Gate Driver Protection Circuits
          1. 7.4.5.5.1 MOSFET VDS Overcurrent Protection (VDS_OCP)
          2. 7.4.5.5.2 Gate Driver Fault (VGS_GDF)
          3. 7.4.5.5.3 Offline Short Circuit and Open Load Detection (OOL and OSC)
      6. 7.4.6 Sense Output (IPROPI)
      7. 7.4.7 Protection Circuits
        1. 7.4.7.1 Fault Reset (CLR_FLT)
        2. 7.4.7.2 DVDD Logic Supply Power on Reset (DVDD_POR)
        3. 7.4.7.3 PVDD Supply Undervoltage Monitor (PVDD_UV)
        4. 7.4.7.4 PVDD Supply Overvoltage Monitor (PVDD_OV)
        5. 7.4.7.5 VCP Charge Pump Undervoltage Lockout (VCP_UV)
        6. 7.4.7.6 Thermal Clusters
        7. 7.4.7.7 Watchdog Timer
        8. 7.4.7.8 Fault Detection and Response Summary Table
    5. 7.5 Programming
      1. 7.5.1 SPI Interface
      2. 7.5.2 SPI Format
      3. 7.5.3 Timing Diagrams
  9. DRV8000-Q1 Register Map
  10. DRV8000-Q1_STATUS Registers
  11. 10DRV8000-Q1_CNFG Registers
  12. 11DRV8000-Q1_CTRL Registers
  13. 12Application and Implementation
    1. 12.1 Application Information
    2. 12.2 Typical Application
      1. 12.2.1 Design Requirements
    3. 12.3 Initialization Setup
    4. 12.4 Power Supply Recommendations
      1. 12.4.1 Bulk Capacitance Sizing
    5. 12.5 Layout
      1. 12.5.1 Layout Guidelines
      2. 12.5.2 Layout Example
  14. 13Device and Documentation Support
    1. 13.1 Receiving Notification of Documentation Updates
    2. 13.2 Support Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  15. 14Revision History
  16. 15Mechanical, Packaging, and Orderable Information
    1. 15.1 Package Option Addendum
    2. 15.2 Tape and Reel Information

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Half-bridge ITRIP Regulation

The device half-bridges have optional fixed-frequency load current regulation called ITRIP. This is done by comparing the active output current against configured current thresholds determined by HB_ITRIP_CONFIG register. Each half-bridge has two possible ITRIP current thresholds, and OUT3-6 also have a third lower current threshold option. ITRIP thresholds, enables, and timing settings are set individually for each half-bridge.

As this device has multiple integrated drivers which are enabled at any given time, there is freewheeling configuration intended to reduce power dissipation during ITRIP half-bridge regulation. Power dissipation is lower with synchronous rectification (MOSFETs) compared with asynchronous rectification (diodes). The half-bridge freewheeling is configurable between non- and synchronous rectification (active and passive freewheeling). The freewheeling settings are shared between half-bridge pairs. The synchronous rectification for half-bridges during ITRIP regulation is enabled by setting bits NSR_OUTX_DIS in configuration register HB_OUT_CNFG1.

ITRIP detection is done on both high- and low-side MOSFETs of each half-bridge. ITRIP is dynamically blanked by internal over-current protection circuitry.

The configurable ITRIP timing parameters are frequency and deglitch. The tables below summarize the ITRIP configuration options.

Table 7-29 Half-bridge ITRIP Synchronous Rectification Settings
NSR_OUTX_DIS ITRIP Half-bridge Off-time Response
0b Hi-Z
1b complementary MOSFET ON
Table 7-30 ITRIP Current Thresholds for Half-bridges
Half-bridges Typ ITRIP Current Thresholds OUTX_ITRIP_LVL
OUT6 6.25 A 10b
5.5 A 01b
2.25 A 00b
OUT5 7.5 A 11b
6.5 A 01b
2.75 A 00b
OUT3 & OUT4 3.5 A 10b
2.5 A 01b
1.25 A 00b
OUT1 & OUT2 0.875 A 1b
0.7 A 0b
Table 7-31 ITRIP Timing - Deglitch Options
Deglitch Time OUTX_ITRIP_DG
2 μs 00b
5 μs 01b
10 μs 10b
20 μs 11b
Table 7-32 ITRIP Timing - Frequency Options
ITRIP Frequency OUTX_ITRIP_FREQ
20 kHz 00b
10 kHz 01b
5 kHz 10b
2.5 kHz 11b

Note: If 20 kHz ITRIP frequency is desired, the fastest deglitch time is recommended (2μs).

ITRIP regulation follows these steps:

  • The low- or high-side of a half-bridge is enabled. The first ITRIP clock edge occurs when half-bridge enabled.
  • If ITRIP limit is exceeded on either low- or high-side, the device waits for longer than deglitch time tDG_ITRIP_HB.
  • If ITRIP limit is still exceeded after the deglitch time, then either the half-bridge will Hi-Z or turn-on opposite MOSFET for the remainder of the ITRIP cycle, depending on NSR_OUTX_DIS bit setting. ITRIP status bit is set, and the regulation loop restarts.
  • If NSR_OUTX_DIS = 1b (synchronous rectification enabled), the current through the enabled MOSFET is monitored for current reversal. If current reversal is detected, the half-bridge output is Hi-Z for the remainder of the ITRIP cycle.

The synchronous rectification or freewheeling feature is enabled by setting bits NSR_OUTX_DIS in configuration register HB_OUT_CNFG1. When NSR_OUTX_DIS = 0b, if ITRIP occurs on either MOSFET, the half-bridge goes Hi-Z. If NSR_OUTX_DIS = 1b, if ITRIP occurs on either MOSFET, the opposite MOSFET will be enabled.

For example, NSR_OUTX_DIS = 1b and OUTX_CNFG = 100b or 010b. If the PWM input sets HS MOSFET ON, and ITRIP is reached on HS MOSFET, the LS MOSFET turns on for the remainder of the ITRIP cycle. The HS MOSFET is turned ON at the end of the cycle. If the PWM input changes within the ITRIP period, the ITRIP counter is reset and ITRIP regulation is active while the LS MOSFET is ON.

If synchronous rectifcation is enabled and MOSFET turns on when ITRIP occurs, current is monitored for a current reversal, or zero-crossing detection. There is zero-crossing detection on both high-side and low-side MOSFETs. If the detected load current reaches 0 A during ITRIP regulation for longer than the deglitch time, then the half-bridge output goes Hi-Z for the remainder of the ITRIP cycle. The zero-crossing deglitch time is the same ITRIP deglitch time.

The diagram below shows the ITRIP behavior for a half-bridge:

DRV8000-Q1 Fixed Frequency ITRIP Current
                    Regulation for Half-bridges Figure 7-13 Fixed Frequency ITRIP Current Regulation for Half-bridges

The ITRIP setting can be changed at any time when SPI communication is available by writing to the OUTX_ITRIP_LVL bits. The change is immediately reflected in device behavior.

If a half-bridge is configured for PWM control and ITRIP, when ITRIP is reached, the behavior is the same as for SPI register control, but the input now comes from the configured PWM pin.